博士 國立交通大學 電子工程系所 93 Although the dimension of device has shrunk into nano technology node, the RC delay of inter-metal interconnection has still been the urgent issue needed to be resolved so far. In order to overcome this problem, the introduction of low-dielectric-constant (low-k) material for inter-metal interconnection can effectively reduce the RC delay. However, it is necessary to estimate the compatibility of low-k materials on semiconductor process during the integration of Cu and low-k materials. In this dissertation, four types of low-k materials are investigated: Methylsilsesquiazane (MSZ), Porous Polysilazane (PPSZ), Hydrogen Silsesquioxane (HSQ), and Porous Organosilicate Glass (POSG). In the traditional lithography process for integrated circuit manufacture, photoresist removal step is an inevitable process. O2 plasma ashing is the main method to remove the photoresist during photoresist (PR) stripping process. It was found that the oxygen plasma will degrade the dielectric properties of low-k m