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AlAs-GaAs heterojunction engineering by means of group-IV elemental interface layersBratina, Gvido ...Valence- and conduction-band discontinuities in AlAs-GaAs heterostructures can be continuously tuned through fabrication of pseudomorphic elemental Ge or Si layers of controlled thickness at the ... interface. The local interface dipole associated with the group-IV interface layer can be added to or subtracted from the natural band offsets depending on the growth sequence. Comparison of high resolution x-ray-photoemission studies of AlAs-Ge-GaAs and AlAs-Si-GaAs heterostructures prepared in situ by molecular-beam epitaxy as a function of the interface concentration of group-IV elements shows qualitative similarities and surprising quantitative differences. The observed dipole per group-IV atom is 3 times as large for Ge as for Si, but the total maximum dipole achievable at the interface is identical (0.4 eV), within experimental uncertainty, for the two group-IV elements.Source: Physical review. B, Condensed matter. - ISSN 0163-1829 (Vol. 45, no. 8, 1992, str. 4528-4531)Type of material - article, component part ; adult, seriousPublish date - 1992Language - englishCOBISS.SI-ID - 87035
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source: Physical review. B, Condensed matter. - ISSN 0163-1829 (Vol. 45, no. 8, 1992, str. 4528-4531)
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