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Estimation the intensity of germ-grain models with overlapping grainsGhorbani, Hamid ; Stoyan, DietrichFormulas are derived for the spherical contact distribution of a planar germ-grain model Z with circular grains where the germs form either a "segmentcluster" process or a "line-based" Poisson point ... process. They are used in order to estimate the intensity lambda of the germ process by means ofthe spherical contact distribution function. As an application the number ofdislocations on a silicon wafer is estimated.Source: Image analysis & stereology : official journal of the International Society for Stereology. - ISSN 1580-3139 (Vol. 22, no. 3, nov. 2003, str. 147-152)Type of material - article, component partPublish date - 2003Language - englishCOBISS.SI-ID - 17239513
Author
Ghorbani, Hamid |
Stoyan, Dietrich
Topics
Particle Size |
Silicon |
Cluster Analysis |
Probability |
Delec, velikost |
Silicij |
Skupek, analiza |
Verjetnost |
Poissonov proces |
delci |
krogle |
silicij |
dislokacije |
modeli
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source: Image analysis & stereology : official journal of the International Society for Stereology. - ISSN 1580-3139 (Vol. 22, no. 3, nov. 2003, str. 147-152)
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Ghorbani, Hamid | ![]() |
Stoyan, Dietrich | ![]() |
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