In this paper we report on the timing resolution obtained in a beam test with pions of 180 GeV/c momentum at CERN for the first production of 45 μm thick Ultra-Fast Silicon Detectors (UFSD). UFSD are ...based on the Low- Gain Avalanche Detector (LGAD) design, employing n-on-p silicon sensors with internal charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction. The UFSD used in this test had a pad area of 1.7 mm2. The gain was measured to vary between 5 and 70 depending on the sensor bias voltage. The experimental setup included three UFSD and a fast trigger consisting of a quartz bar readout by a SiPM. The timing resolution was determined by doing Gaussian fits to the time-of-flight of the particles between one or more UFSD and the trigger counter. For a single UFSD the resolution was measured to be 34 ps for a bias voltage of 200 V, and 27 ps for a bias voltage of 230 V. For the combination of 3 UFSD the timing resolution was 20 ps for a bias voltage of 200 V, and 16 ps for a bias voltage of 230 V.
Timing performance of small cell 3D silicon detectors Kramberger, G.; Cindro, V.; Flores, D. ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
08/2019, Volume:
934
Journal Article
Peer reviewed
Open access
A silicon 3D detector with a single cell of 50 × 50 μm2 was produced and evaluated for timing applications. The measurements of time resolution were performed for 90Sr electrons with dedicated ...electronics used also for determining time resolution of Low Gain Avalanche Detectors (LGADs). The measurements were compared to those with LGADs and also simulations. The studies showed that the dominant contribution to the timing resolution comes from the time walk originating from different induced current shapes for hits over the cell area. This contribution decreases with higher bias voltages, lower temperatures and smaller cell sizes. It is around 30 ps for a 3D detector of 50 × 50 μm2 cell at 150 V and −20 °C, which is comparable to the time walk due to Landau fluctuations in LGADs. It even improves for inclined tracks and larger pads composed of multiple cells. A good agreement between measurements and simulations was obtained, thus validating the simulation results.
The edge transient-current technique (Edge-TCT) and charge-collection measurements with passive test structures made with the LFoundry 150-nm CMOS process on a p-type substrate with an initial ...resistivity of over 3 kΩcm are presented. The measurements were made before and after irradiation with reactor neutrons up to 2⋅1015 neq/cm2. Two sets of devices were investigated: unthinned (700 μm) with the substrate biased through the implant on top and thinned (200 μm) with a processed and metallised backplane.
The depletion depth was estimated with the Edge-TCT and the collected charge was measured with a 90Sr source using an external amplifier having a 25-ns shaping time. The depletion depth for a given bias voltage decreased with the increasing neutron fluence, but it was still larger than 70 μm at 250 V after the highest fluence. After irradiation a much higher collected charge was measured for the thinned detectors with a processed backplane compared to the unthinned devices, although the same or an even larger depletion depth was measured in the unthinned devices. The most probable value of the collected charge of over 5000 electrons was measured with a thinned device also after irradiation to 2⋅1015 neq/cm2. This is sufficient to ensure the successful operation of these detectors at the outer layer of the pixel detector in the ATLAS experiment at the upgraded HL-LHC.
Radiation hardness of thin Low Gain Avalanche Detectors Kramberger, G.; Carulla, M.; Cavallaro, E. ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
05/2018, Volume:
891
Journal Article
Peer reviewed
Open access
Low Gain Avalanche Detectors (LGAD) are based on a n++-p+-p-p++ structure where an appropriate doping of the multiplication layer (p+) leads to high enough electric fields for impact ionization. Gain ...factors of few tens in charge significantly improve the resolution of timing measurements, particularly for thin detectors, where the timing performance was shown to be limited by Landau fluctuations. The main obstacle for their operation is the decrease of gain with irradiation, attributed to effective acceptor removal in the gain layer. Sets of thin sensors were produced by two different producers on different substrates, with different gain layer doping profiles and thicknesses (45, 50 and 80 μm). Their performance in terms of gain/collected charge and leakage current was compared before and after irradiation with neutrons and pions up to the equivalent fluences of 5⋅1015 cm−2. Transient Current Technique and charge collection measurements with LHC speed electronics were employed to characterize the detectors. The thin LGAD sensors were shown to perform much better than sensors of standard thickness (∼300 μm) and offer larger charge collection with respect to detectors without gain layer for fluences <2⋅1015 cm−2. Larger initial gain prolongs the beneficial performance of LGADs. Pions were found to be more damaging than neutrons at the same equivalent fluence, while no significant difference was found between different producers. At very high fluences and bias voltages the gain appears due to deep acceptors in the bulk, hence also in thin standard detectors.
The high luminosity upgrade of the Large Hadron Collider, foreseen for 2027, requires the replacement of the ATLAS Inner Detector with a new all-silicon Inner Tracker (ITk). The expected total ...integrated luminosity of 4000 fb−1 means that the strip part of the ITk detector will be exposed to a large radiation fluence of up to Φeq = 1.6 × 1015 1 MeV neq/cm and an ionizing dose of 0.66 MGy, including a safety factor of 1.5. Radiation-hard n+-in-p micro-strip sensors for use in the ITk have been developed by the ATLAS ITk Strip Sensor collaboration and produced by Hamamatsu Photonics K.K. In this paper, the results obtained from the electrical characterization of the latest barrel ATLAS17LS sensor prototype, before and after irradiation, are shown.
Surface properties of the long-strip barrel, full-sized and miniature sensors have been studied before and after proton, neutron and gamma irradiation up to the maximal fluences and radiation doses specified for the ITk Strip tracker. Sensors have been irradiated by protons at CYRIC, Tohoku University (Japan), the Proton Irradiation Facility at CERN, Karlsruhe Inst. Tech. (Germany) and at the University of Birmingham (UK), by neutrons from the Ljubljana TRIGA reactor (Slovenia) and by gamma rays from the 60Co source in UJP Praha (Czech Republic).
It has been verified that the surface radiation damage does not influence the sensor functionality. The breakdown voltage is well above the maximum operational voltage. All the tested surface parameters, such as the inter-strip resistance and capacitance, coupling capacitance and bias resistance satisfy the ATLAS ITk specifications for strip sensors.
The High-Granularity Timing Detector is a detector proposed for the ATLAS Phase II upgrade. The detector, based on the Low-Gain Avalanche Detector (LGAD) technology, will cover the pseudo-rapidity ...region of 2.4<|η|<4.0 with two end caps on each side and a total area of 6.4 m2. The timing performance can be improved by implanting an internal gain layer that can produce signals with a fast rising edge. It significantly improves the signal-to-noise ratio. The required average timing resolution per track for a minimum ionizing particle is 30 ps at the start and 50 ps at the end of the HL-LHC operation. This is achieved with several layers of LGAD. The innermost region of the detector would accumulate a 1MeV neutron-equivalent fluence up to 2.5× 1015 neq/cm2 including a safety factor of 1.5 before being replaced during the scheduled shutdowns. The addition of this new detector is expected to play an important role in the mitigation of high pile-ups at the HL-LHC. The layout and performance of the various versions of LGAD prototypes produced by Hamamatsu (HPK) have been studied by the ATLAS Collaboration. The breakdown voltages, depletion voltages, inter-pad gaps, collected charge as well as the time resolution have been measured and the production yield of large size sensors has been evaluated.
Experimental Study of Acceptor Removal in UFSD Jin, Y.; Ren, H.; Christie, S. ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
12/2020, Volume:
983, Issue:
C
Journal Article
Peer reviewed
Open access
The performance of the Ultra-Fast Silicon Detectors (UFSD) after irradiation with neutrons and protons is compromised by the removal of acceptors in the thin layer below the junction responsible for ...the gain. This effect is tested both with capacitance–voltage, C–V, measurements of the doping concentration and with measurements of charge collection, CC, using charged particles. We find a perfect linear correlation between the bias voltage to deplete the gain layer determined with C–V and the bias voltage to collect a defined charge, measured with charge collection. An example for the usefulness of this correlation is presented.
A Transient Current Technique (TCT) utilizing an IR laser with 100 ps pulse width and beam diameter of FWHM = 8 μm was used to evaluate non-irradiated and irradiated p-type silicon micro-strip ...detectors. The beam was parallel with the surface and perpendicular to the strips (Edge-TCT) so that the electron hole pairs were created at known depth in the detector. Induced current pulses were measured in one of the strips. The pulse shapes were analyzed in a new way, which does not require the knowledge of effective trapping times, to determine drift velocity, charge collection and electric field profiles in heavily irradiated silicon detectors. The profiles were studied at different laser beam positions (depth of carrier generation), voltages and fluences up to 5·10 15 neutrons cm -2 . A strong evidence for charge multiplication at high voltages was found with the detector irradiated to the highest fluence.
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