The production of the strip sensors for the ATLAS Inner Tracker (ITk) will start in 2020. Nearly 22,000 large area sensors will be produced over a period of about five years by Hamamatsu Photonics ...K.K. (HPK). The institutes involved in the sensor development and production are committed to deliver and maintain the highest quality sensors for the experiment. A Quality Assurance (QA) strategy has been prepared to be carried out during the whole production period. Once the process has been characterized as providing the required pre-irradiation specifications and the proper radiation hardness, the onus is on the manufacturer to rigidly stick to that qualified process. Still, sample testing with specific device-element structures and irradiation of devices should be implemented by the ITk sensor collaboration.
A detailed irradiation and testing plan has been prepared by the ATLAS-ITk Collaboration, together with a newly designed test chip with specific structures to monitor different key technological and device parameters during the whole production. The tests and irradiations will be carried out on a sample basis. In order to have a practical methodology, samples from alternating batches will be sent for irradiations with protons, neutrons and gammas, and then tested in order to check that the characteristics remain within specifications. The detailed plan and the design and test methods for the structures in the test chip are presented here.
The inner tracker of the ATLAS detector is scheduled to be replaced by a completely new silicon-based inner tracker (ITk) for the Phase-II of the CERN LHC (HL-LHC). The silicon strip detector covers ...the volume 40<R<100 cm in the radial and |z|<300 cm in the longitudinal directions. The silicon sensors for the detector will be fabricated using the n+-on-p 6-inch wafer technology, for a total of 22,000 wafers. Intensive studies were carried out on the final prototype sensors ATLAS17LS fabricated by Hamamatsu Photonics (HPK). The charge collection properties were examined using penetrating 90Sr β-rays and the ALIBAVA fast readout system for the miniature sensors of 1 cm ×1 cm in area. The samples were irradiated by protons in the 27 MeV Birmingham Cyclotron, the 70 MeV CYRIC at Tohoku University, and the 24 GeV CERN-PS, and by neutrons at Ljubljana TRIGA reactor for fluence values up to 2 × 1015 neq/cm2. The change in the charge collection with fluence was found to be similar to the previous prototype ATLAS12, and acceptable for the ITk. Sensors with two active thicknesses, 300μm (standard) and 240μm (thin), were compared and the difference in the charge collection was observed to be small for bias voltages up to 500 V. Some samples were also irradiated with gamma radiation up to 2 MGy, and the full depletion voltage was found to decrease with the dose. This was caused by the Compton electrons due to the 60Co gamma radiation. To summarize, the design of the ATLAS17LS and technology for its fabrication have been verified for implementation in the ITk. We are in the stage of sensor pre-production with the first sensors already delivered in January of 2020.
The high luminosity upgrade of the Large Hadron Collider, foreseen for 2027, requires the replacement of the ATLAS Inner Detector with a new all-silicon Inner Tracker (ITk). The expected total ...integrated luminosity of 4000 fb−1 means that the strip part of the ITk detector will be exposed to a large radiation fluence of up to Φeq = 1.6 × 1015 1 MeV neq/cm and an ionizing dose of 0.66 MGy, including a safety factor of 1.5. Radiation-hard n+-in-p micro-strip sensors for use in the ITk have been developed by the ATLAS ITk Strip Sensor collaboration and produced by Hamamatsu Photonics K.K. In this paper, the results obtained from the electrical characterization of the latest barrel ATLAS17LS sensor prototype, before and after irradiation, are shown.
Surface properties of the long-strip barrel, full-sized and miniature sensors have been studied before and after proton, neutron and gamma irradiation up to the maximal fluences and radiation doses specified for the ITk Strip tracker. Sensors have been irradiated by protons at CYRIC, Tohoku University (Japan), the Proton Irradiation Facility at CERN, Karlsruhe Inst. Tech. (Germany) and at the University of Birmingham (UK), by neutrons from the Ljubljana TRIGA reactor (Slovenia) and by gamma rays from the 60Co source in UJP Praha (Czech Republic).
It has been verified that the surface radiation damage does not influence the sensor functionality. The breakdown voltage is well above the maximum operational voltage. All the tested surface parameters, such as the inter-strip resistance and capacitance, coupling capacitance and bias resistance satisfy the ATLAS ITk specifications for strip sensors.
Humidity sensitivity of large area silicon sensors: Study and implications Fernández-Tejero, J.; Allport, P.P.; Aviñó, O. ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
10/2020, Volume:
978, Issue:
C
Journal Article
Peer reviewed
Open access
The production of large area sensors is one of the main challenges that the ATLAS collaboration faces for the new Inner-Tracker full-silicon detector. During the prototype fabrication phase for the ...High Luminosity Large Hadron Collider upgrade, several ATLAS institutes observed indications of humidity sensitivity of large area sensors, even at relative humidities well below the dew point. Specifically, prototype Barrel and End-Cap silicon strip sensors fabricated in 6-inch wafers manifest a prompt decrease of the breakdown voltage when operating under high relative humidity, adversely affecting the performance of the sensors. In addition to the investigation of these prototype sensors, a specific fabrication batch with special passivation is also studied, allowing for a deeper understanding of the responsible mechanisms.
This work presents an extensive study of this behaviour on large area sensors. The locations of the hotspots at the breakdown voltage at high humidity are revealed using different infrared thermography techniques. Several palliative treatments are attempted, proving the influence of sensor cleaning methods, as well as baking, on the device performance, but no improvement on the humidity sensitivity was achieved. Furthermore, a study of the incidence of the sensitivity in different batches is also presented, introducing a hypothesis of the origins of the humidity sensitivity associated to the sensor edge design, together with passivation thickness and conformity. Several actions to be taken during sensor production and assembly are extracted from this study, in order to minimize the impact of humidity sensitivity on the performance of large area silicon sensors for High Energy Physics experiments.
Miniature sensors with external dimensions of 10 mm x 10 mm were produced together with full-size sensors for the innermost ring (R0) of the end-cap part in the upgraded ATLAS inner tracker (ITk). ...AC- and DC-coupled n-type strips with three different pitches (wide, default and narrow) were processed on high-resistivity p-type FZ silicon substrates by Hamamatsu Photonics. The miniature sensors were irradiated with 70-MeV protons at CYRIC, Tohoku University (Japan) and reactor neutrons at the Jožef Stefan Institute (Slovenia) to three different 1-MeV neutron equivalent fluences: 0.5, 1 and 2 x 1015neqcm−2. The upper fluence range exceeds the highest anticipated in the innermost part of the ATLAS ITk-Strips over the HL-LHC lifetime (∼1.25 × 1015neqcm2). The charge collection in the test sensors was evaluated systematically using a 90Sr β-source and an Alibava analogue readout system at reverse-bias voltages up to 1000 V.
•The charge collection in the test sensors was evaluated systematically.•The collected charge increases with the applied voltage.•At higher voltages the effect of multiplication can be seen.•The multiplication becomes higher at long annealing times.
Abstract Objectives Dibenzoyl peroxide (BPO), an initiator in polymethyl methacrylate denture base resins, has been associated with allergic reactions in human patients. This study evaluated the ...content of BPO in acrylic denture base materials (ADBM) prior and subsequent to recommended and additional post-polymerization, and subsequent to storage in varying solutions. The goal was to determine differences in BPO content in ADBMs, to determine whether differences are seen in BPO release over time and to test different procedures for additional BPO reduction. Methods Three heat-polymerizing, two auto-polymerizing and a microwave polymerizing “hypoallergic” ADBM were investigated. Five samples (Ø414.57 mg) were polymerized according to manufacturers’ instructions from each of the six acrylic resins for each of the variables to be investigated. For each material the BPO content was measured as delivered by the manufacturer and subsequent to recommended and post-polymerization protocols. The BPO content was also evaluated after storage in distilled water (22 °C, 192 h), in artificial saliva (35 °C, 192 h), in ethanol, potassium permanganate and ammonium ferric(II) sulfate solutions (22 °C, 48 h). Results High performance liquid chromatography (HPLC) and indirect iodometry were used to detect BPO concentrations. Significant differences were noted in BPO concentrations between the polymers as delivered from the manufacturer (0.13–1.20%), subsequent to polymerization (0.05–0.32%) and to the various treatment and storage procedures ( H and U -tests, p < 0.05). The microwave polymerizing ADBM contained the lowest initial level of BPO. No reduction of BPO content was noted after 8 days of storage in artificial saliva or water. The most notable reduction (63–95%) occurred subsequent to post-polymerization cycles. Significance BPO was detected in all investigated ADBMs. It is unlikely, under oral conditions, that BPO is released from the investigated ADBMs. The BPO concentration can be reduced effectively by additional post-polymerization.
The production of the strip sensors for the ATLAS Inner Tracker (ITk) will start in 2020. Nearly 22,000 large area sensors will be produced over a period of about five years by Hamamatsu Photonics ...K.K. (HPK). The institutes involved in the sensor development and production are committed to deliver and maintain the highest quality sensors for the experiment. A Quality Assurance (QA) strategy has been prepared to be carried out during the whole production period. Once the process has been characterized as providing the required pre-irradiation specifications and the proper radiation hardness, the onus is on the manufacturer to rigidly stick to that qualified process. Still, sample testing with specific device-element structures and irradiation of devices should be implemented by the ITk sensor collaboration. A detailed irradiation and testing plan has been prepared by the ATLAS-ITk Collaboration, together with a newly designed test chip with specific structures to monitor different key technological and device parameters during the whole production. The tests and irradiations will be carried out on a sample basis. In order to have a practical methodology, samples from alternating batches will be sent for irradiations with protons, neutrons and gammas, and then tested in order to check that the characteristics remain within specifications. Here we present the detailed plan and the design and test methods for the structures in the test chip.
The vertex detector at the proposed CLIC multi-TeV linear e+e− collider must have minimal material content and high spatial resolution, combined with accurate time-stamping to cope with the expected ...high rate of beam-induced backgrounds. One of the options being considered is the use of active sensors implemented in a commercial high-voltage CMOS process, capacitively coupled to hybrid pixel ASICs. A prototype of such an assembly, using two custom designed chips (CCPDv3 as active sensor glued to a CLICpix readout chip), has been characterised both in the lab and in beam tests at the CERN SPS using 120GeV/c positively charged hadrons. Results of these characterisation studies are presented both for single and dual amplification stages in the active sensor, where efficiencies of greater than 99% have been achieved at −60V substrate bias, with a single hit resolution of 6.1μm. Pixel cross-coupling results are also presented, showing the sensitivity to placement precision and planarity of the glue layer.
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