Background and purpose
We investigated the effect of stress hyperglycemia on the functional outcomes of non‐diabetic hemorrhagic stroke. In addition, we investigated the usefulness of intensive ...rehabilitation for improving functional outcomes in patients with stress hyperglycemia.
Methods
Non‐diabetic hemorrhagic stroke patients were recruited and divided into two groups: intracerebral hemorrhage (ICH) (n = 165) and subarachnoid hemorrhage (SAH) (n = 156). Each group was divided into non‐diabetics with or without stress hyperglycemia. Functional assessments were performed at 7 days and 3, 6 and 12 months after stroke onset. The non‐diabetic with stress hyperglycemia groups were again divided into two groups who either received or did not receive intensive rehabilitation treatment. Serial functional outcome was compared between groups.
Results
For the ICH group, patients with stress hyperglycemia had worse modified Rankin Scale, National Institutes of Health Stroke Scale, Functional Ambulatory Category and Korean Mini‐Mental State Examination scores than patients without stress hyperglycemia. For the SAH group, patients with stress hyperglycemia had worse scores on all functional assessments than patients without stress hyperglycemia at all time‐points. After intensive rehabilitation treatment of patients with stress hyperglycemia, the ICH group had better scores on Functional Ambulatory Category and the SAH group had better scores on all functional assessments than patients without intensive rehabilitation treatment.
Conclusions
Stress hyperglycemia affects the long‐term prognosis of non‐diabetic hemorrhagic stroke patients. Among stress hyperglycemia patients, intensive rehabilitation can enhance functional improvement after stroke.
In order to investigate discrimination between nuclear recoil and electron recoil events for the KIMS-NaI dark matter search experiment, we measured the pulse shapes produced by neutrons and gamma ...rays in a NaI(Tl) crystal. Relatively good pulse shape discrimination (PSD) power due to high light output of recently developed crystals makes it possible to test whether the annual modulation signal observed by the DAMA/LIBRA experiment is caused by nuclear recoil events. We applied the PSD to underground data taken with a 9.15 kg low-background and high-light-output NaI(Tl) crystal for 134 days. Good agreement between underground data and electron recoil events was observed.
An extensive phase transition of (Na1−xLix)NbO3 (x=0.04, 0.1) from orthorhombic (Pmc21) to rhombohedral (R3c) was induced by mechanical stress. A reverse phase transition was induced by thermal ...annealing at temperatures as low as 300°C. A sintered pellet was subjected to mechanical stress by grinding to powder form in a mortar. The orthorhombic phase in the ceramic pellet transformed to R3c phase, by as much as 83–89% by grinding. The net cell volume of the R3c increased by 0.4–0.5Å3 per four formula unit (z=4). The reverse transition from the R3c to Pmc21 was 84–97mass% after annealing at 300°C. The activation free energy for the reverse transition was calculated to be 2–10meV using an Arrhenius-type equation. The crystal class of the Pmc21, i.e. mm2, conformed to the measured P–E hysteresis (Ps≅20μC/cm2) of the pellet.
•An extensive phase transition in Na1−xLixNbO3 was induced by mechanical stress.•Orthorhombic phase in the sintered pellet transformed to a rhombohedral phase.•The extent of the transformation was ≥83mass% by grinding in a mortar.•A reverse phase transition occurred by annealing at temperatures as low as 300°C.•The activation energy for the reverse phase transition was 2–10meV.
A search for inelastic boosted dark matter (IBDM) using the COSINE-100 detector with 59.5 days of data is presented. This relativistic dark matter is theorized to interact with the target material ...through inelastic scattering with electrons, creating a heavier state that subsequently produces standard model particles, such as an electron-positron pair. In this study, we search for this electron-positron pair in coincidence with the initially scattered electron as a signature for an IBDM interaction. No excess over the predicted background event rate is observed. Therefore, we present limits on IBDM interactions under various hypotheses, one of which allows us to explore an area of the dark photon parameter space that has not yet been covered by other experiments. This is the first experimental search for IBDM using a terrestrial detector.
Abstract Improving human islet transplantation is often limited by the shortage of donors and the side effects of immunosuppressive agents. If immunoisolation is properly used, it can overcome these ...obstacles. Because artificial materials are adopted in this technique, however, there are still multiple issues with biocompatibility and foreign body reactions. We developed a chondrocyte microencapsulated immunoisolated islet (CMI-islet) that allows living cells to act as the immunoisolating material. To manufacture CMI-islets for xenotransplantation, isolated rat pancreatic islets were placed on low cell-binding culture dishes. Subsequently, expanded canine auricular cartiage primary cells were seeded on these dishes at a high density and maintained in a suspended state via a shaking culture system. Morphological evaluations showed good islet viability and a clear progression of the islet- encapsulation events. When the cells were challenged with glucose, they were able to secrete sufficient insulin according to glucose concentrations. The CMI-islets responded better to the glucose challenge than did nude pancreatic islets and created better glucose-insulin feedback regulation. Moreover, insulin secretion into the culture medium was confirmed over a period of 100 days, showing the survival and secretory capacity of the CMI-islet cells. By microencapsulating pancreatic islets with recipient ear cartilage cells, long-term insulin secretion can be maintained and the response to glucose challenges improved. This new immunodelusion technology differs from other immunoisolation techniques in that the donor tissue is enclosed with the recipient's tissue, thus allowing the transplanted cells to be recognized as recipient cells. This microencapsulation method may lead to developing viable xenotransplantation techniques that do not use immunosuppressive drugs.
Background. Although allopurinol is a very effective urate-lowering drug for complicated hyperuricemia, in some patients, it can induce severe cutaneous adverse reactions (SCARs). Recent ...investigations suggest that HLA-B*5801 is a very strong marker for allopurinol-induced SCARs, especially in the population with a high frequency of HLA-B*5801. Korea is one of the countries with a high frequency of HLA-B*5801 which is the only subtype of HLA-B58 in the Korean population.
Objective. This study was conducted to find out the incidence of allopurinol-induced hypersensitivity on patients with chronic renal insufficiency (CRI) according to HLA-B58 and the clinical implications of HLA-B58 as a risk marker for the development of allopurinol-induced hypersensitivity.
Methods. We retrospectively reviewed the medical records of patients with CRI who took allopurinol and carried out serologic human leukocyte antigen (HLA) typing for kidney transplantation between January 2003 and May 2010.
Results. Among a total of 448 patients with CRI, 16 (3.6%) patients experienced allopurinol hypersensitivity. Nine of these patients (2.0%) were diagnosed with SCARs (two Stevens-Johnson syndrome and seven allopurinol hypersensitivity syndrome) and seven patients (1.6%) had simple maculopapular rashes. The HLA-B58 allele was present in all patients with allopurinol-induced SCARs, while the frequency of HLA-B58 was only 9.5% in allopurinol-tolerant patients (P < 0.05). The incidence of allopurinol-induced SCARs in CRI shows a wide disparity according to HLA-B58 18% in HLA-B58 (+) versus 0% in HLA-B58 (−). Among patients without HLA-B58, most (98.2%) of the CRI patients were tolerant to allopurinol and only 1.8% experienced simple rashes after taking allopurinol.
Conclusions. In this study, the incidence of allopurinol-induced SCARs was considerably high in CRI patients with HLA-B58. This finding indicates that the presence of HLA-B58 may increase the risk of allopurinol-induced SCARs. Screening tests for HLA-B58 in CRI patients will be clinically helpful in preventing severe allopurinol hypersensitivity reactions.
A new thin multilayer circuit‐analogue (CA) absorber design consisting of a patterned resistive sheet, glass/epoxy, and glass/MWCNT‐epoxy for X‐band radar is presented. The proposed thin multilayer ...CA‐absorber (a total thickness of 2.23 mm) has smaller thickness by 0.71 mm than a single‐layer CA‐absorber (a total thickness of 2.93 mm). Although the absorption bandwidth of the multilayer CA‐absorber in the X‐band was slightly narrower than the single‐layer CA‐absorber, the absorption performance of the multilayer CA‐absorber was comparable to that of the single layer. Also, when the CA‐absorber was applied to the leading edge of a wing‐shaped structure, the radar cross‐section level was comparable with the single‐layer CA‐absorber even though the thickness of the multilayer CA‐absorber was less than that of the single‐layer CA‐absorber.
Argon Fluoride (ArF) lithography is essential to develop a sub-100-nm device, however, line edge roughness (LER) and line width roughness (LWR) is playing a critical role due to the immaturity of ...photoresist and the lack of etch resistance. Researchers are trying to improve LER and LWR properties by optimizing photoresist materials and process conditions. In this paper, experiment results are presented to study the impact of LER and LWR to device performance so that the reasonable control range of LER and LWR can be defined. To implement the experiment, a 80-nm node of single negative-channel metal-oxide-semiconductor transistors were fabricated, which had various ranges of gate length, width, LER, and LWR. The amount of LER and LWR could be successfully controlled by applying different resist materials, defocus, and overetch time. Experimental results show that leakage current is significantly increased as LWR increases when the gate length is less than 85 nm. The main degradation is standard deviation of off-current (I/sub off/), and LWR is better representation to characterize a device performance.
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