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  • Enhanced ferroelectricity i... Enhanced ferroelectricity in ultrathin films grown directly on silicon
    Cheema, Suraj S; Kwon, Daewoong; Shanker, Nirmaan ... Nature (London), 04/2020, Volume: 580, Issue: 7804
    Journal Article
    Peer reviewed
    Open access

    Ultrathin ferroelectric materials could potentially enable low-power perovskite ferroelectric tetragonality logic and nonvolatile memories . As ferroelectric materials are made thinner, however, the ...
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  • Metal-Insulator-Metal Singl... Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
    Karbasian, Golnaz; McConnell, Michael; George, Hubert ... Applied sciences, 03/2017, Volume: 7, Issue: 3
    Journal Article
    Peer reviewed
    Open access

    Single electron transistors are nanoscale electron devices that require thin, high-quality tunnel barriers to operate and have potential applications in sensing, metrology and beyond-CMOS computing ...
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  • Self-Aligned, Gate Last, FD... Self-Aligned, Gate Last, FDSOI, Ferroelectric Gate Memory Device With 5.5-nm Hf0.8Zr0.2O2, High Endurance and Breakdown Recovery
    Chatterjee, Korok; Sangwan Kim; Karbasian, Golnaz ... IEEE electron device letters, 2017-Oct., Volume: 38, Issue: 10
    Journal Article
    Peer reviewed

    We demonstrate a nonvolatile single transistor ferroelectric gate memory device with ultra-thin (5.5 nm) Hf 0.8 Zr 0.2 O 2 (HZO) fabricated using a self-aligned gate last process. The FETs are ...
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  • Challenges to Partial Switc... Challenges to Partial Switching of Hf0.8Zr0.2O2 Gated Ferroelectric FET for Multilevel/Analog or Low-Voltage Memory Operation
    Chatterjee, Korok; Kim, Sangwan; Karbasian, Golnaz ... IEEE electron device letters, 09/2019, Volume: 40, Issue: 9
    Journal Article
    Peer reviewed

    The ability to partially switch an FeFET could enable their use as an embedded low-voltage memory and as analog weight storage in artificial neural networks (ANNs). We report on memory ...
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  • Quaternary Barrier InAlGaN ... Quaternary Barrier InAlGaN HEMTs With f/f of 230/300 GHz
    Ronghua Wang; Guowang Li; Karbasian, G. ... IEEE electron device letters, 2013-March, 2013-03-00, Volume: 34, Issue: 3
    Journal Article
    Peer reviewed
    Open access

    Depletion-mode quaternary barrier In 0.13 Al 0.83 Ga 0.04 N high-electron-mobility transistors (HEMTs) with regrown ohmic contacts and T-gates on a SiC substrate have been fabricated. Devices with ...
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  • Partial switching of ferroelectrics for synaptic weight storage
    Kinder, Erich W.; Alessandri, Cristobal; Pandey, Pratyush ... 2017 75th Annual Device Research Conference (DRC), 2017-June
    Conference Proceeding

    Gokmen and Vlasov proposed that the training of deep neural networks would be dramatically accelerated by the realization of resistive processing units that can store analog weights to minimize data ...
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