A high breakdown voltage of 11.7 V is achieved for a GeSn ultrathin (<inline-formula> <tex-math notation="LaTeX">\sim </tex-math></inline-formula>2 nm) body nanosheet p-channel field-effect ...transistor. This voltage is 5.7 V higher than that for a 10-nm GeSn nanosheet. The large effective bandgap associated with the quantum confinement in the <inline-formula> <tex-math notation="LaTeX">\sim </tex-math></inline-formula>2-nm Ge<inline-formula> <tex-math notation="LaTeX">_{{0}.{9}} </tex-math></inline-formula>Sn<inline-formula> <tex-math notation="LaTeX">_{{0}.{1}} </tex-math></inline-formula> channel is responsible for the enhanced breakdown voltage. An extremely scaled Ge<inline-formula> <tex-math notation="LaTeX">_{{0}.{9}} </tex-math></inline-formula>Sn<inline-formula> <tex-math notation="LaTeX">_{{0}.{1}} </tex-math></inline-formula> ultrathin body with channel thickness reduced to <inline-formula> <tex-math notation="LaTeX">\sim </tex-math></inline-formula>2 nm is realized through the co-optimization of low-temperature epitaxy and selective isotropic etching. As-grown Ge<inline-formula> <tex-math notation="LaTeX">_{{0}.{9}} </tex-math></inline-formula>Sn<inline-formula> <tex-math notation="LaTeX">_{{0}.{1}} </tex-math></inline-formula> channel layers as thin as 4 nm sandwiched by Ge<inline-formula> <tex-math notation="LaTeX">_{{0}.{97}} </tex-math></inline-formula>Sn<inline-formula> <tex-math notation="LaTeX">_{{0}.{03}} </tex-math></inline-formula>/Ge caps are carefully designed for ultrathin bodies. Radical-based highly selective isotropic dry etching is adopted to etch the caps and sacrificial layers and to release the GeSn ultrathin body channels. In addition, owing to strong quantum confinement in the <inline-formula> <tex-math notation="LaTeX">\sim </tex-math></inline-formula>2-nm ultrathin body, a high <inline-formula> <tex-math notation="LaTeX">{I}_{\text {ON}}/{I}_{\text {OFF}} </tex-math></inline-formula> ratio of <inline-formula> <tex-math notation="LaTeX">\ge 1.7 \times 10^{{7}} </tex-math></inline-formula> at <inline-formula> <tex-math notation="LaTeX">{V}_{\text {DS}} </tex-math></inline-formula> = -0.5 V is achieved.
Controlling ferroic orders (ferroelectricity, ferromagnetism and ferroelasticity) by optical methods is a significant challenge due to the large mismatch in energy scales between the order parameter ...coupling strengths and the incident photons. Here, we demonstrate an approach to manipulate multiple ferroic orders in an epitaxial mixed-phase BiFeO3 thin film at ambient temperature via laser illumination. Phase-field simulations indicate that a light-driven flexoelectric effect allows the targeted formation of ordered domains. We also achieved precise sequential laser writing and erasure of different domain patterns, which demonstrates a deterministic optical control of multiferroicity at room temperature. As ferroic orders directly influence susceptibility and conductivity in complex materials, our results not only shed light on the optical control of multiple functionalities, but also suggest possible developments for optoelectronics and related applications.The remote, non-volatile and reversible optical control of ferroic orders is challenging. Here, using laser illumination, multiple orders in epitaxial mixed-phase BiFeO3 are manipulated deterministically using a thermally driven flexoelectric effect.
Abstract
Interest in bringing p- and n-type monolayer semiconducting transition metal dichalcogenides (TMD) into contact to form rectifying pn diode has thrived since it is crucial to control the ...electrical properties in two-dimensional (2D) electronic and optoelectronic devices. Usually this involves vertically stacking different TMDs with pn heterojunction or, laterally manipulating carrier density by gate biasing. Here, by utilizing a locally reversed ferroelectric polarization, we laterally manipulate the carrier density and created a WSe
2
pn homojunction on the supporting ferroelectric BiFeO
3
substrate. This non-volatile WSe
2
pn homojunction is demonstrated with optical and scanning probe methods and scanning photoelectron micro-spectroscopy. A homo-interface is a direct manifestation of our WSe
2
pn diode, which can be quantitatively understood as a clear rectifying behavior. The non-volatile confinement of carriers and associated gate-free pn homojunction can be an addition to the 2D electron–photon toolbox and pave the way to develop laterally 2D electronics and photonics.
This article considers the problem of output feedback funnel control for a class of uncertain nonlinear systems with arbitrary known relative degree. By utilizing the funnel control approach with a ...barrier Lyapunov function, a novel adaptive output feedback controller is constructed recursively, which accomplishes the output tracking with prescribed transient behavior. The developed control scheme features that the precise knowledge of system nonlinearities, including generally required bounding functions, is not needed. A physical example is performed to verify the effectiveness of the proposed theoretical findings.
This paper investigates the distributed finite-time fault-tolerant containment control problem for multiple unmanned aerial vehicles (multi-UAVs) in the presence of actuator faults and input ...saturation. The distributed finite-time sliding-mode observer (SMO) is first developed to estimate the reference for each follower UAV. Then, based on the estimated knowledge, the distributed finite-time fault-tolerant controller is recursively designed to guide all follower UAVs into the convex hull spanned by the trajectories of leader UAVs with the help of a new set of error variables. Moreover, the unknown nonlinearities inherent in the multi-UAVs system, computational burden, and input saturation are simultaneously handled by utilizing neural network (NN), minimum parameter learning of NN (MPLNN), first-order sliding-mode differentiator (FOSMD) techniques, and a group of auxiliary systems. Furthermore, the graph theory and Lyapunov stability analysis methods are adopted to guarantee that all follower UAVs can converge to the convex hull spanned by the leader UAVs even in the event of actuator faults. Finally, extensive comparative simulations have been conducted to demonstrate the effectiveness of the proposed control scheme.
Objective(s)
To describe cochlear implantation (CI) outcomes, with speech perception, auditory, language, and parent‐reported auditory and speech behaviors, in children with an enlarged vestibular ...aqueduct (EVA) and incomplete partition type 2 (IP‐II) and compare to control children without inner ear malformations (IEMs) and to determine cerebrospinal fluid gusher rates and effect on outcomes.
Study Design
Systematic review and meta‐analysis.
Methods
MEDLINE, Embase, Cochrane, and CINAHL databases were searched from inception to February 2020. Studies reporting relevant outcomes in children with EVA or EVA + IP‐II and controls without IEMs undergoing CI were included. Mean differences in speech perception, auditory, and language scores between cases and controls were meta‐analyzed. Gusher rates were determined by proportion meta‐analyses.
Results
Of 214 identified articles, 42 met inclusion criteria, evaluating 775 cases and 2,191 controls. Of –cases, 578 (74.6%) had EVA and 197 (25.4%) had EVA + IP‐II. Cases showed a significant improvement in speech perception, auditory and language performance, comparable to controls. Parent‐reported auditory and speech production behaviors outcomes were positive among cases and comparable to controls. Pooled gusher proportions in EVA and EVA + IP‐II cases were 27.7% (95% CI: 17.6–39.1) and 48.6% (95% CI: 28.6–69.0), respectively, with a proportion difference of 20.9% (95% CI: 11.0–30.1). Gusher occurrence did not impact speech perception or language outcomes.
Conclusion
Outcomes in children with EVA or EVA + IP‐II undergoing CI are favorable and largely comparable to outcomes in children with hearing loss undergoing CI without IEMs. Intraoperative gusher is more prevalent among children with EVA + IP‐II as compared to iEVA. Gusher does not influence speech perception and language development outcomes.
Level of Evidence
NA Laryngoscope, 132:1459–1472, 2022
Increased DNA replication and metastasis are hallmarks of cancer progression, while deregulated proliferation often triggers sustained replication stresses in cancer cells. How cancer cells overcome ...the growth stress and proceed to metastasis remains largely elusive. Proliferating cell nuclear antigen (PCNA) is an indispensable component of the DNA replication machinery. Here, we show that phosphorylation of PCNA on tyrosine 211 (pY211-PCNA) regulates DNA metabolism and tumor microenvironment. Abrogation of pY211-PCNA blocks fork processivity, resulting in biogenesis of single-stranded DNA (ssDNA) through a MRE11-dependent mechanism. The cytosolic ssDNA subsequently induces inflammatory cytokines through a cyclic GMP-AMP synthetase (cGAS)-dependent cascade, triggering an anti-tumor immunity by natural killer (NK) cells to suppress distant metastasis. Expression of pY211-PCNA is inversely correlated with cytosolic ssDNA and associated with poor survival in patients with cancer. Our results pave the way to biomarkers and therapies exploiting immune responsiveness to target metastatic cancer.
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•pY211-PCNA is important in maintaining the integrity of replication forks•Inhibition of pY211 leads to biogenesis of cytosolic ssDNA•The cytosolic ssDNA activates the cGAS-STING-cytokine inflammatory pathway•Abrogation of pY211-PCNA induces an anti-tumor immunity mediated by NK cells
Wang et al. show that abrogation of Y211 phosphorylation of PCNA leads to replication fork collapse and cytosolic ssDNA, which triggers the cGAS-STING cascade to release type I interferons from tumor cells. Loss of Y211 phosphorylation results in anti-tumor immunity by NK cells and subsequently the suppression of distant metastasis.
The eight stacked Ge 0.9 Sn 0.1 ultrathin bodies down to 3 nm with high <inline-formula> <tex-math notation="LaTeX">{I}_{\text {ON}}/I_{\text {OFF}} </tex-math></inline-formula> and eight stacked Ge ...0.9 Sn 0.1 thick nanosheets with high <inline-formula> <tex-math notation="LaTeX">{I}_{\text {ON}} </tex-math></inline-formula> per stack are demonstrated. For the eight stacked Ge 0.9 Sn 0.1 ultrathin bodies, the 50 epilayers, including Ge 0.9 Sn 0.1 channels, double Ge 0.97 Sn 0.03 /Ge (8 nm/3 nm) caps, heavily B-doped (~2E21 cm −3 ) Ge sacrificial layers (SLs), and undoped Ge buffer were epitaxially grown to reach high inter-channel uniformity with the co-optimization of epitaxy and radical-based highly selective isotropic dry etching (HiSIDE). The thin double Ge 0.97 Sn 0.03 caps can provide sufficient etching selectivity and stabilize the channel to prevent the channels from bending and buckling. The neutral radicals can isotropically etch the Ge 0.97 Sn 0.03 /Ge caps, Ge:B SLs, and Ge buffer to form the highly uniform eight stacked Ge 0.9 Sn 0.1 ultrathin bodies. The record <inline-formula> <tex-math notation="LaTeX">{I}_{\text {ON}}/{I}_{\text {OFF}} </tex-math></inline-formula> of 1.4 <inline-formula> <tex-math notation="LaTeX">\times 10^{{7}} </tex-math></inline-formula> at <inline-formula> <tex-math notation="LaTeX">{V}_{\text {DS}} \,\,=\,\,-0.05 </tex-math></inline-formula> V is achieved among GeSn 3-D pFETs due to the quantum confinement. For the eight stacked Ge 0.9 Sn 0.1 thick nanosheets, the record <inline-formula> <tex-math notation="LaTeX">{I}_{\text {ON}} </tex-math></inline-formula> of 92 <inline-formula> <tex-math notation="LaTeX">\mu \text{A} </tex-math></inline-formula> per stack at <inline-formula> <tex-math notation="LaTeX">{V}_{\text {OV}} = {V}_{\text {DS}} = -0.5 </tex-math></inline-formula> V is achieved among GeSn 3-D pFETs. Thick nanosheets can provide higher mobility than ultrathin bodies due to the reduced surface roughness scattering.
Redox flow batteries are promising technologies for large-scale electricity storage, but have been suffering from low energy density and low volumetric capacity. Here we report a flow cathode that ...exploits highly concentrated sulphur-impregnated carbon composite, to achieve a catholyte volumetric capacity 294 Ah l(-1) with long cycle life (>100 cycles), high columbic efficiency (>90%, 100 cycles) and high energy efficiency (>80%, 100 cycles). The demonstrated catholyte volumetric capacity is five times higher than the all-vanadium flow batteries (60 Ah l(-1)) and 3-6 times higher than the demonstrated lithium-polysulphide approaches (50-117 Ah l(-1)). Pseudo-in situ impedance and microscopy characterizations reveal superior electrochemical and morphological reversibility of the sulphur redox reactions. Our approach of exploiting sulphur-impregnated carbon composite in the flow cathode creates effective interfaces between the insulating sulphur and conductive carbon-percolating network and offers a promising direction to develop high-energy-density flow batteries.
Multiferroics—materials that exhibit coupled ferroic orders—are considered to be one of the most promising candidate material systems for next‐generation spintronics, memory, low‐power ...nanoelectronics and so on. To advance potential applications, approaches that lead to persistent and extremely fast functional property changes are in demand. Herein, it is revealed that the phase transition and the correlated ferroic orders in multiferroic BiFeO3 (BFO) can be modulated via illumination of single short/ultrashort light pulses. Heat transport simulations and ultrafast optical pump‐probe spectroscopy reveal that the transient strain induced by light pulses plays a key role in determining the persistent final states. Having identified the diffusionless phase transformation features via scanning transmission electron microscopy, sequential laser pulse illumination is further demonstrated to perform large‐area phase and domain manipulation in a deterministic way. The work contributes to all‐optical and rapid nonvolatile control of multiferroicity, offering different routes while designing novel optoelectronics.
All‐optical manipulation of the complex phases and domain structures in multiferroic BiFeO3 thin films on ultrafast timescale is demonstrated by adoption of extremely short light pulses. The configuration of large‐area optically written domains can be controlled by tuning the competing elastic and electrostatic energies. These results offer a novel route for the development of all‐optical switchable devices and high‐speed multifunctional optoelectronics.
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