We report vertical GaN-on-GaN p-n diodes with a breakdown voltage (BV) of 1.7 kV and a low differential specific ON-resistance Formula Omitted of 0.55 Formula Omitted with current spreading ...considered (or 0.4 Formula Omitted using the diode bottom mesa size), resulting in a figure-of-merit (Formula Omitted of 5.3 GW/cm2 (or 7.2 GW/cmFormula Omitted. These devices exhibit a current swing over 14 orders of magnitude and a low ideality factor of 1.3. Temperature dependent Formula Omitted-Formula Omitted measurements show that the BV increases with increasing temperature, a signature of avalanche breakdown.
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