PARR is widely used in the diagnostics of canine lymphoma. In human and veterinary medicine, melting curve analysis (MCA) has successfully been introduced to facilitate the process. Since visual ...interpretation of melting curves can be rather subjective, the purpose of this study was to develop an objective interpretation of melting curves by calculating the maximum fluorescence decrease (dFmax) within a defined rise of temperature. Lymph node aspirates and blood of 34 dogs with lymphoma and 28 control dogs were tested. 27/34 lymphoma cases were correctly detected to be monoclonal (sensitivity 79%). 2/28 control dogs showed a monoclonal rearrangement (specificity 93%). B‐ and T‐cell neoplasia were still detectable using DNA amount as low as 10 ng. In serial dilutions of tumor DNA with DNA of normal tonsils, the detection limit was 25% for B‐cell lymphomas and 100% for T‐cell lymphoma, suggesting that PCR conditions could still be optimized.
We propose an effective model called the "charge model," for the half-filled one-dimensional Hubbard and extended Hubbard models. In this model, spin-charge separation, which has been justified from ...an infinite on-site repulsion (U) in the strict sense, is compatible with charge fluctuations. Our analyses based on the many-body Wannier functions succeeded in determining the optical conductivity spectra in large systems. The obtained spectra reproduce the spectra for the original models well even in the intermediate U region of U=5–10T, with T being the nearest-neighbor electron hopping energy. These results indicate that the spin-charge separation works fairly well in this intermediate U region against the usual expectation and that the charge model is an effective model that applies to actual quasi-one-dimensional materials classified as strongly correlated electron systems.
The mechanism of void formation in crystalline silicon after laser irradiation is extensively studied by molecular-dynamics simulations. When the laser-irradiated region is melted due to a rapid ...temperature increase, small voids are generated in that region because of large density fluctuations. Because tensile stresses are generated in the melting region, the large empty hole is formed upon cooling. When the temperature drops below the melting point, recrystallization occurs around the large void. We find that the void persists even after the recrystallization process is stopped, and that a part of the laser-irradiated region is amorphous even at room temperature. The stress distribution around the void and the amorphous region in crystalline silicon is also discussed.
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