Proximity-induced superconductivity in a 3D topological insulator represents a new avenue for observing zero-energy Majorana fermions inside vortex cores. Relatively small gaps and low transition ...temperatures of conventional s-wave superconductors put hard constraints on these experiments. Significantly larger gaps and higher transition temperatures in cuprate superconductors might be an attractive alternative to considerably relax these constraints, but it is not clear whether the proximity effect would be effective in heterostructures involving cuprates and topological insulators. Here, we present angle-resolved photoemission studies of thin Bi2Se3 films grown in situ on optimally doped Bi2Sr2CaCu2O8+ delta substrates that show the absence of proximity-induced gaps on the surfaces of Bi2Se3 films as thin as a 1.5 quintuple layer. These results suggest that the superconducting proximity effect between a cuprate superconductor and a topological insulator is strongly suppressed, likely due to a very short coherence length along the c axis, incompatible crystal and pairing symmetries at the interface, small size of the topological surface state's Fermi surface, and adverse effects of a strong spin-orbit coupling in the topological material.
A three-dimensional strong-topological insulator or semimetal hosts topological surface states which are often said to be gapless so long as time-reversal symmetry is preserved. This narrative can be ...mistaken when surface state degeneracies occur away from time-reversal-invariant momenta. The mirror invariance of the system then becomes essential in protecting the existence of a surface Fermi surface. Here we show that such a case exists in the strong-topological-semimetal Bi(4)Se(3). Angle-resolved photoemission spectroscopy and ab initio calculations reveal partial gapping of surface bands on the Bi(2)Se(3) termination of Bi(4)Se(3)(111), where an 85 meV gap along Γ̅K̅ closes to zero toward the mirror-invariant Γ̅M̅ azimuth. The gap opening is attributed to an interband spin-orbit interaction that mixes states of opposite spin helicity.
We have performed photoemission studies of the electronic structure in LiC(6) and KC(8), a nonsuperconducting and a superconducting graphite intercalation compound, respectively. We have found that ...the charge transfer from the intercalant layers to graphene layers is larger in KC(8) than in LiC(6), opposite of what might be expected from their chemical composition. We have also measured the strength of the electron-phonon interaction on the graphene-derived Fermi surface to carbon derived phonons in both materials and found that it follows a universal trend where the coupling strength and superconductivity monotonically increase with the filling of graphene π(*) states. This correlation suggests that both graphene-derived electrons and graphene-derived phonons are crucial for superconductivity in graphite intercalation compounds.
We present the first angle-resolved photoemission studies of electronic structure in CaC6, a superconducting graphite intercalation compound with T_{c}=11.6 K. We find that, contrary to theoretical ...models, the electron-phonon coupling on the graphene-derived Fermi sheets with high-frequency graphene-derived phonons is surprisingly strong and anisotropic. The shape of the Fermi surface is found to favor a dynamical intervalley nesting via exchange of high-frequency phonons. Our results suggest that graphene sheets play a crucial role in superconductivity in graphite intercalation compounds.
The magnetotransport in single layer graphene has been experimentally investigated in magnetic fields up to 18 T as a function of temperature. A pronounced T dependence is observed for T≲50 K, which ...is either metallic, or insulating, depending on the filling factor ν. The metal-insulator transition (MIT) occurs at |ν{c}|∼0.65 and in the regime of the dissipative transport, where the longitudinal resistance Rxx>1/2R{K}. The critical resistivity (Rxx per square) is ρ{xx}(ν{c})≈1/2R{K} and is correlated with the appearance of zero plateau in Hall conductivity σ{xy}(ν) and peaks in σ{xx}(ν). This leads us to construct a universal low-T (n, B) phase diagram of this quantum phase transition.