Epitaxial lift-off process enables the separation of III-V device layers from gallium arsenide substrates and has been extensively explored to avoid the high cost of III-V devices by reusing the ...substrates. Conventional epitaxial lift-off processes require several post-processing steps to restore the substrate to an epi-ready condition. Here we present an epitaxial lift-off scheme that minimizes the amount of post-etching residues and keeps the surface smooth, leading to direct reuse of the gallium arsenide substrate. The successful direct substrate reuse is confirmed by the performance comparison of solar cells grown on the original and the reused substrates. Following the features of our epitaxial lift-off process, a high-throughput technique called surface tension-assisted epitaxial lift-off was developed. In addition to showing full wafer gallium arsenide thin film transfer onto both rigid and flexible substrates, we also demonstrate devices, including light-emitting diode and metal-oxide-semiconductor capacitor, first built on thin active layers and then transferred to secondary substrates.
According to the market research report, the nuclear decommissioning services market is currently experiencing considerable growth, with a projected Compound Annual Growth Rate (CAGR) of nearly 13% ...during the 2020–2024 forecast period. This expansion is primarily fueled by the advancement of Industry 4.0, in conjunction with the emergence of cutting-edge technologies such as the Internet of Things, big data, artificial intelligence, and 5G.
Even though the fact that robots have already been utilized in the nuclear industry, their adoption has been hindered by conservative regulations. However, the nuclear decommissioning market presents an opportunity for the advancement of robotics technology. The British have already invested heavily in encouraging the use of intelligent robots for nuclear decommissioning, and other countries, such as Taiwan, should follow suit.
Taiwan's flourishing robotics development industry in manufacturing, logistics, and other domains can be leveraged to introduce advanced robotics in the decommissioning of its nuclear power plants. By doing so, Taiwan can establish itself as a competitive player in the nuclear decommissioning services market for the next two decades.
A method of forming cubic phase (zinc blende) GaN (referred as c‐GaN) on a CMOS‐compatible on‐axis Si (100) substrate is reported. Conventional GaN materials are hexagonal phase (wurtzite) (referred ...as h‐GaN) and possess very high polarization fields (∼MV/cm) along the common growth direction of . Such large polarization fields lead to undesired shifts (e.g., wavelength and current) in the performance of photonic and vertical transport electronic devices. The cubic phase of GaN materials is polarization‐free along the common growth direction of , however, this phase is thermodynamically unstable, requiring low‐temperature deposition conditions and unconventional substrates (e.g., GaAs). Here, novel nano‐groove patterning and maskless selective area epitaxy processes are employed to integrate thermodynamically stable, stress‐free, and low‐defectivity c‐GaN on CMOS‐compatible on‐axis Si. These results suggest that epitaxial growth conditions and nano‐groove pattern parameters are critical to obtain such high quality c‐GaN. InGaN/GaN multi‐quantum‐well structures grown on c‐GaN/Si (100) show strong room temperature luminescence in the visible spectrum, promising visible emitter applications for this technology.
Thermodynamically stable, stress‐free, and low‐defectivity GaN is integrated on CMOS Si (100) substrates. A new mask‐free local‐area epitaxy is introduced, resolving the issue of lattice and thermal mismatch between GaN and Si. A novel U‐shaped nano‐groove pattern is proposed, enabling polarization‐free cubic phase GaN. InGaN/GaN multi‐quantum‐well structures on such polarization‐free GaN/Si templates offer an ideal roadmap for (integrated) photonic devices.
Reflection plays a very important role in learning processes and is very helpful for promoting learning performance. Many higher education institutions today are actively promoting learners’ ...reflection ability in order to help them cope with the fast changing world they will be entering when they graduate. Online learning provides potential for applying new teaching and learning strategies. However, it has not yet been systematically studied how to concretely apply reflection strategies in an online learning environment. The aim of this study is to explore how high level prompts and peer assessment can affect a learner’s reflection levels in an online learning context. The participants were 157 university students and each individual was randomly assigned to one of the fourteen learning conditions. We found that the main factor affecting reflection levels is high level prompts followed by high quality observation that has a moderating effect on learners’ reflection levels. However, peer feedback has no significant influence on reflection levels.
The theory of boundary eigensolutions is developed for boundary value problems. It is general for boundary value problem. Steklov-Poincaré operator maps the values of a boundary condition of the ...solution of the Laplace equation in a domain to the values of another boundary condition. The eigenvalue is imbedded in the Dirichlet to Neumann (DtN) map. The DtN operator is called the Steklov operator. In this paper, we study the Steklov eigenproblems by using the dual boundary element method/boundary integral equation method (BEM/BIEM). First, we consider a circular domain. To analytically derive the eigensolution of the above shape, the closed-form fundamental solution of the 2D Laplace equation, ln(r), is expanded into degenerate kernel by using the polar coordinate system. After the boundary element discretization of the BIE for the Steklov eigenproblem, it can be transformed to a standard linear eigenequation. Problems can be effectively solved by using the dual BEM. Finally, we consider the annulus. Not only the Steklov problem but also the mixed Steklov eigenproblem for an annular domain has been considered.
Combined ipsilateral femoral neck and shaft fractures are an uncommon type of fractures. A number of different implant options are available for the management of this injury. Two-device procedures ...were suggested because of the higher rate of malunion by single-device treatment. However, surgical treatment using a cephalomedullary nail is still an alternative option that provides better mechanical advantage and minimal invasion. This study details the technique of treating these pattern fractures with proximal femoral nail anti-rotation II (PFNA-II) to achieve an acceptable reduction in both fracture sites.
Ten cases of ipsilateral femoral neck and shaft fractures under reduction by PFNA II were included and reviewed. A saw-bone model was also utilized to perform the detailed technique of reduction and fixation of PFNA II.
Under the special technique by using the PFNA II, all ten cases achieved optimal reduction and alignment of both fracture sites in intra-operative fluoroscopy. There was no intra-operative complication noted. After 6 months of follow-up, radiography revealed proper alignment and well union of the fractures.
Fixation of ipsilateral femoral neck and shaft fractures with a single construct provides advantages of good biomechanical function, minimal invasion, reduced blood loss, and less operation time when comparing to two-device fixation. Thus, if acceptable reduction could be achieved, fixation by one PFNA II was a good alternative choice for this injury pattern.
A novel postdetection method based on an optical delay-and-add filter (DAF) is proposed for dispersion monitoring at 40 Gb/s or beyond. The proposed method can be used with or without a pilot tone ...and works well even when there exists a residual chirp due to the finite direct current (DC) extinction ratio of a Mach-Zehnder (MZ) modulator or self-phase modulation (SPM). Several modulation formats, including conventional nonreturn to zero (NRZ), return to zero (RZ), carrier-suppressed RZ (CSRZ), RZ differential phase shift keying (RZ-DPSK), and CSRZ-DPSK are used to numerically demonstrate the feasibility of this technique without using a pilot tone.
Many fabricated III-V MOSFETs have electrically thin field oxide (FOX) that leads to parasitic currents and parasitic capacitances. When extracting long-channel mobility of such devices using the ...conventional two-FET method, some of these parasitic components are not subtracted out. In this paper, we present a simple four-FET method for extracting long-channel mobility that works well even when the equivalent oxide thickness (EOT) of the FOX is equal to the EOT of the FET gate oxide.
When the cartilage on the prominent ears is reshaped, the arising stress returns the tissue to its initial configuration. Laser irradiation of areas of maximal stress leads to stress relaxation and ...results in a stable configuration. Sixty auricles were harvested from 30 New Zealand white rabbits and cut into a rectangle measuring 50 mm by 25 mm with an average thickness of approximately 1.3 mm. Bilateral skin was included
for
ex vivo studies. Continuous cryogen spray cooling (CSC) with laser energy was delivered to the exposed cartilage for reshaping. In clinical applications, from January 2006 to December 2016, a total of 50 patients with 100 bat ears who underwent CO
2
laser reshaping (otoplasty) were assessed. A continuous cooling system (4 °C) in conjunction with a CO
2
laser was applied to make a retroauricular-approached incision and reshape the ear cartilage. The well cartilage bending correlated with the different parameters demonstrated in the continuous CSC protected group. All 100 (100%) of the subjects experienced early complications (≤ 1 month) related to laser exposure with swelling, while 5 (5%) experienced ecchymosis, 2 (2%) minimal hematoma, 2 (2%) scarring, 1 (1%) minor infection, 1 (1%) under correction, 1 (1%) overcorrection, and 1 (1%) relapse. These problems were corrected and/or had resolved after 3 months. All patients achieved good to excellent results in our final outcome assessment (> 6 months). Laser reshaping has a potential use in certain surgical procedures involving the cartilage. The appropriate conditions for laser ear reshaping clearly depend on the laser wavelength used, energy controlling, and tissue optical properties.
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