The production of the strip sensors for the ATLAS Inner Tracker (ITk) will start in 2020. Nearly 22,000 large area sensors will be produced over a period of about five years by Hamamatsu Photonics ...K.K. (HPK). The institutes involved in the sensor development and production are committed to deliver and maintain the highest quality sensors for the experiment. A Quality Assurance (QA) strategy has been prepared to be carried out during the whole production period. Once the process has been characterized as providing the required pre-irradiation specifications and the proper radiation hardness, the onus is on the manufacturer to rigidly stick to that qualified process. Still, sample testing with specific device-element structures and irradiation of devices should be implemented by the ITk sensor collaboration.
A detailed irradiation and testing plan has been prepared by the ATLAS-ITk Collaboration, together with a newly designed test chip with specific structures to monitor different key technological and device parameters during the whole production. The tests and irradiations will be carried out on a sample basis. In order to have a practical methodology, samples from alternating batches will be sent for irradiations with protons, neutrons and gammas, and then tested in order to check that the characteristics remain within specifications. The detailed plan and the design and test methods for the structures in the test chip are presented here.
We study B --> K(*)l+l- decays (l = e, mu) based on a data sample of 657 x 10(6) BB pairs collected with the Belle detector at the KEKB e+e- collider. We report the differential branching fraction, ...isospin asymmetry, K* polarization, and the forward-backward asymmetry (A(FB)) as functions of q2 = M(ll)(2)c2. The fitted A(FB) spectrum exceeds the standard model expectation by 2.7 standard deviations. The measured branching fractions are B(B --> K*l+l-) = (10.7(-1.0)(+1.1) +/- 0.9) x 10(-7) and B(B --> Kl+l-) = (4.8(-0.4)(+0.5) +/- 0.3) x 10(-7), where the first errors are statistical and the second are systematic, with the muon to electron ratios R(K*) = 0.83 +/- 0.17 +/- 0.08 and R(K) = 1.03 +/- 0.19 +/- 0.06.
We have established the basic technology for a radiation-tolerant p-type silicon microstrip sensor for the ATLAS inner tracker at the SLHC, manufactured on 6-in. wafers without onset of ...microdischarge up to 1000V. In comparison of wafer materials, little advantage was observed in the 6in. p-type MCZ material to the p-FZ that was available in Japan. The evolution of the charge collection as a function of bias voltage showed that the proton-irradiated samples with apparent lower full depletion voltage collected less charge at saturation than the neutron irradiated samples.
The ATLAS experiment is going to replace the current Inner Detector with an all new inner tracker (ITk) in the ATLAS detector for HL-LHC at CERN. Silicon strip detectors cover the outer layers of the ...barrel and the endcap sections. We have designed and fabricated a prototype single-sided n+-in-p AC-coupled silicon strip sensor for the outer barrel layer with long strips (LS), ATLAS17LS. It is of the maximum allowable size to fit in a 6-in. silicon wafer, with an outer dimension of 9.80(width)×9.76(length)cm2. The sensor features two rows of LS strip segments, 4.83 cm strip length per segment, a strip pitch of 75.5 μm, and a slim edge design. We have implemented technology for high voltage operation of up to 1000V, with a good signal collection after irradiation fluence of 5.6 × 1014neq∕cm2at the end of HL-LHC operation.
We had two objectives for the ATLAS17LS fabrication: qualification of the sensor design and fabrication quality, and providing an adequate number of the sensors for prototyping the building blocks of the strip detector. The sensors were fabricated in 3 batches by HPK with standard wafers from the foundry (320 μm physical thickness). Additional 10 sensors were fabricated with a thinner active thickness of 240 μm to investigate the influence of active thickness on charge collection. Another additional 5 sensors, with special passivation to investigate the influence of passivation on humidity sensitivity. The visual inspection of fabricated sensors revealed an inadequacy that the designed metal width of 10 μm was too narrow. The initial measurements by the vendor showed that the sensors fulfilled the specifications: onset voltages of Microdischarge VMD above the operation voltage VOP (700V for the 1st and 2nd batches; 500V for the 3rd batch, which has improved the yield), leakage currents of < 0.1μA/cm2 at VOP, full depletion voltages VFD< 330V, and rates of bad strips <<1%.
Abstract
The behaviour of I in soil depends on its chemical form in soil solution. Stable I (127I) in the soil solution under actual soil conditions was investigated as a natural analogue of ...long-lived radioiodine (129I). Soil samples were collected at 5-cm depth intervals down to 20 cm from forests and grasslands in Rokkasho, where the Japanese first commercial nuclear fuel reprocessing plant is located, and the soil solution was extracted by centrifugation. Almost half of total I in the soil solution was iodide, and the other half was dissolved organic I (DOI), with iodate under the detection limit. The proportion of DOI in total I at 0–5 cm depth was larger than the proportions at 5–20 cm depth. The concentration of DOI was positively correlated with that of DOC in the soil solution, suggesting that the behaviour of DOI in the surface soil is affected by labile organic matter dynamics.
The ATLAS community is facing the last stages prior to the production of the upgraded silicon strip Inner Tracker for the High-Luminosity Large Hadron Collider. An extensive Market Survey was carried ...out in order to evaluate the capability of different foundries to fabricate large area silicon strip sensors, satisfying the ATLAS specifications. The semiconductor manufacturing company, Infineon Technologies AG, was one of the two foundries, along with Hamamatsu Photonics K.K., that reached the last stage of the evaluation for the production of the new devices. The full prototype wafer layout for the participation of Infineon, called ATLAS17LS-IFX, was designed using a newly developed Python-based Automatic Layout Generation Tool, able to rapidly design sensors with different characteristics and dimensions based on a few geometrical and technological input parameters. This work presents the layout design process and the results obtained from the evaluation of the new Infineon large area sensors before and after proton and neutron irradiations, up to fluences expected in the inner layers of the future ATLAS detector.
We report a study of B→(J/ψγ)K and B→(ψ'γ)K decay modes using 772×10⁶ B ̅B events collected at the Υ(4S) resonance with the Belle detector at the KEKB energy-asymmetric e(+)e(-) collider. We observe ...X(3872)→J/ψγ and report the first evidence for χ(c2)→J/ψγ in B→(X_{c ̅cγ)K decays, while in a search for X(3872)→ψ'γ no significant signal is found. We measure the branching fractions, B(B(±)→X(3872)K(±))B(X(3872)→J/ψγ)=(1.78(-0.44)(+0.48)±0.12)×10(-6), B(B(±)→χ(c2)K(±))=(1.11(-0.34)(+0.36)±0.09)×10(-5), B(B(±)→X(3872)K(±))B(X(3872)→ψ'γ)<3.45×10⁶ (upper limit at 90% C.L.), and also provide upper limits for other searches.
The cross section for e(+)e(-)-->pi(+)pi(-)J/psi between 3.8 and 5.5 GeV/c(2) is measured using a 548 fb(-1) data sample collected on or near the Upsilon(4S) resonance with the Belle detector at ...KEKB. A peak near 4.25 GeV/c(2), corresponding to the so called Y(4260), is observed. In addition, there is another cluster of events at around 4.05 GeV/c(2). A fit using two interfering Breit-Wigner shapes describes the data better than one that uses only the Y(4260), especially for the lower-mass side of the 4.25 GeV enhancement.
We present the first measurements of absolute branching fractions of Ξ_{c}^{0} decays into Ξ^{-}π^{+}, ΛK^{-}π^{+}, and pK^{-}K^{-}π^{+} final states. The measurements are made using a dataset ...comprising (772±11)×10^{6} BBover ¯ pairs collected at the ϒ(4S) resonance with the Belle detector at the KEKB e^{+}e^{-} collider. We first measure the absolute branching fraction for B^{-}→Λover ¯_{c}^{-}Ξ_{c}^{0} using a missing-mass technique; the result is B(B^{-}→Λover ¯_{c}^{-}Ξ_{c}^{0})=(9.51±2.10±0.88)×10^{-4}. We subsequently measure the product branching fractions B(B^{-}→Λover ¯_{c}^{-}Ξ_{c}^{0})B(Ξ_{c}^{0}→Ξ^{-}π^{+}), B(B^{-}→Λover ¯_{c}^{-}Ξ_{c}^{0})B(Ξ_{c}^{0}→ΛK^{-}π^{+}), and B(B^{-}→Λover ¯_{c}^{-}Ξ_{c}^{0})B(Ξ_{c}^{0}→pK^{-}K^{-}π^{+}) with improved precision. Dividing these product branching fractions by the result for B^{-}→Λover ¯_{c}^{-}Ξ_{c}^{0} yields the following branching fractions: B(Ξ_{c}^{0}→Ξ^{-}π^{+})=(1.80±0.50±0.14)%, B(Ξ_{c}^{0}→ΛK^{-}π^{+})=(1.17±0.37±0.09)%, and B(Ξ_{c}^{0}→pK^{-}K^{-}π^{+})=(0.58±0.23±0.05)%. For the above branching fractions, the first uncertainties are statistical and the second are systematic. Our result for B(Ξ_{c}^{0}→Ξ^{-}π^{+}) can be combined with Ξ_{c}^{0} branching fractions measured relative to Ξ_{c}^{0}→Ξ^{-}π^{+} to yield other absolute Ξ_{c}^{0} branching fractions.
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