According to the nonlinear response characteristics of magnetron, this article proves that a 2.45 GHz band continuous-wave magnetron can perform as a modulator in communication system. The ...intermediate frequency (IF) signal coupled to the power supply of magnetron, as the ripple of anode voltage, can be modulated to a nearby band centered on the resonant frequency of magnetron. We deduced the output expression of free oscillating magnetron under the influence of anode voltage ripple. And electromagnetic simulation was accomplished to testify the validity of the theoretical derivation. Moreover, we designed the circuit to couple signal with frequencies of 2, 3, and 4 MHz to the anode voltage. The output spectrum of magnetron changed as the frequencies were tuned, to satisfy the frequency requirements for modulating. Finally, a simultaneous information and power transfer system based on a magnetron combined with the power supply coupling circuit was developed and tested. This system achieved the modulation, amplification, transmission, and demodulation of low-frequency signal which is equivalent to human voice. This research reveals that the proposed techniques have great potential for future simultaneous wireless information and power transfer (SWIPT) system because they provide higher power at lower cost.
Microwave devices based on high-power magnetrons are currently used widely and there is a strong demand for phase-controlled magnetrons. In this work, the performance of a 20-kW <inline-formula> ...<tex-math notation="LaTeX">S </tex-math></inline-formula>-band continuous-wave magnetron with varied anode voltage ripple is studied. The anode voltage ripple is introduced to an equivalent model of the magnetron to evaluate the system's performance theoretically. The effects of the anode voltage ripple and the injection parameters on the magnetron's output are thus analyzed numerically. Furthermore, experiments are performed while the anode voltage ripple is varied from 4.2% to 0.6% using a shunt capacitance-adjustable ripple filter module. A nearly tripled locking bandwidth is observed under a constant injection ratio at 0.1 with decreasing ripple. The ripple-suppressed system pulls its sideband energy to the locking frequency and thus achieves a spectral intensity increment of 0.9 dB, phase noise reduction of 13 dB at an offset of 100 kHz, and phase jitter convergence from ±1.8° to ±0.9°. The experimental features validate the results obtained from the theoretical analyses. The results of this investigation also provide guidance for future industrial applications of phase-locked magnetron arrays.
Al-doped ZnO (AZO) thin film is an important transparent and conducting electrode in optoelectronic devices. Further reduction of the resistivity and an increase in the transmittance of AZO are ...required. This paper proposes AZO films that are prepared using ion-beam assisted sputtering (IBAS). A low-energy Ar ion-beam with a kinetic energy between 0 and 50eV is used. The electrical and optical properties of IBAS AZO films are studied in terms of the substrate temperature (RT-300°C). The results show that the resistivity of AZO films decreases as the amount of chemisorbed oxygen and O–Zn bonds decrease, which increases the number of oxygen vacancies. The transmittance in the visible region is increased because of the high crystallinity of AZO films. The resistivity of IBAS AZO deposited at 300°C with an anode voltage of 30V is reduced to 5.6×10−3Ωcm because of the high carrier concentration and mobility. This shows that that ion-beam treatment changes the surface/adatom reaction during the growth of AZO films, which is similar to the effect of substrate heating. The electrical and optical properties of the AZO films that depend on the ion-beam energy and substrate temperature are discussed.
A novel Trench Insulated Gate Bipolar Transistor is proposed, where an integrated Zener diode is introduced. When the anode voltage becomes relatively high, the Zener diode could automatically clamp ...the potential of the carrier stored layer which locates beneath the base region of the active trench nMOS. Then in the blocking-state, the dose of the carrier stored layer could be as high as possible to reduce the on-state voltage without affecting the breakdown voltage. In the on-state, the drain-to-source voltage of the trench nMOS is also clamped, which helps to decrease the saturation current. Simulation results based on a 1.2 kV device show that, in comparison with the conventional one, the saturation current and the on-state voltage are decreased by 42.8 and 43.1%, respectively.
The paper presents the results of the evaluation of the drop of anode voltage while the open burning arc between the steel plate (cathode) and the wire electrode CuSi3Mn1. Experiments were performed ...to determine the temperature of metal of electrode droplets at manual and mechanized deposit welding. The results of experimental determination of heat contents and temperature of metal of electrode droplets are represented on the chart.
Diamond-like carbon (DLC) films were deposited by the linear ion source (LIS)-physical vapor deposition condition changing the anode voltages from 800V to 1800V and bias voltages from 0V to −200V and ...characteristics of the films were investigated using Nano-indentation, Micro Raman spectroscopy, Field Emission-Scanning Electron Microscope (FE-SEM), Residual stress tester, Time-of-Flight Secondary Ion Mass Spectroscopy (TOF-SIMS) and X-ray Photoelectron Spectroscopy (XPS). The residual stress and hardness increased relatively with increasing the ion energy up to anode voltage of 1400V and −100 bias voltage respectively. From the Micro Raman analysis, the content of sp3 carbon in sp3/sp2 ratio was increased with increasing the anode voltage. From these results, residual stress and hardness of DLC films are increased as increase of anode voltages due to the enhancement of 3-dimensional cross-links between carbon atoms and dangling bond. Also, the internal compressive stress is increased with increasing the voltages. Therefore, the optimum anode and bias voltage are considered to be around 1400V and −100V respectively in these experimental conditions.
► DLC films were deposited by linear ion source — PVD method. ► sp3 bond is maximum at anode voltage above 1400V and bias voltage of −100V. ► DLC film hydrogen contents were 37at.%, and the hardness was 23GPa. ► The optimum anode voltage and bias voltage for DLC deposition are 1400V and −100V, respectively.
The Penning discharge structure was designed to produce plasma anode used in a high current pulsed electron beams source. The cylindrical anode of diameter 80 mm and height 30 mm was powered by a ...pulse voltage of ∼5 kV. The plasma discharge characteristics were investigated by means of oscilloscope, current sensor and digital camera. The results show that the plasma discharge goes through two main stages, a high-voltage, low-current stage and a high current discharge stage. There exists an anode voltage threshold to ignite the high current discharge. With the higher working pressure and magnetic field intensity, the Penning discharge operates more quickly and steadily. The time accuracy can be controlled under ±0.5 μs The peak discharge current increases proportionally with the anode voltage. The HCPEB emissions were realized with the optimized parameters including working pressure 7 × 10−2 Pa, anode voltage 5 kV, magnetic field 2000 Gauss and ballast resistor 200 Ω.
•Penning discharge was designed to produce plasma anode for HCPEB source.•Plasma discharge goes through high-voltage, low-current and high current discharge stages.•Anode voltage threshold was needed to ignite the high current discharge.•Time accuracy of Penning discharge was controlled under ±0.5 μs.•HCPEB emission was realized with optimized working parameters.
