In many power converter applications, study of doping concentration in the carrier storage region of IGBT is considered desirable. This paper introduces an estimation technique for base doping ...concentration through investigation into transient anode voltage modeling of Non-punch through (NPT) Insulated Gate Bipolar Transistor (IGBT). Parabolic profile has been used for derivation of minority carrier concentration within the base. With the derived expression, an analytical model has been developed for turn-off anode voltage of IGBT in all doping profile conditions. Better agreements with the experimental results have been found compared to the previously used linear model. Finally, the implications of base doping dependence on the anode voltage are discussed, including implementation of such a doping concentration estimation technique.
Preparation of SrGa_2S_4:Ce thin films has been carried out by the multi-source deposition technique and it's structural and lIuminescent properties were characterized. The thin films show blue ...emission with good chromaticity. The dependence of the Iuminescence on Ga_2S_3/Sr flux ratio and annealing conditions were investigated, The film prepared at Ga_2S_3/Sr flux ratios of 60, and annealed at 850℃ showed high luminance with CIE co-ordinates of(0.11, 0.10). However these films were showing different PL and CL spectra. Results are discussed on the formation process of SrGa_2S_4 and it's luminescent property depending on the annealing atmosphere.
Generally, short-circuit protections for IGBT are provided by the assistance of analogical discrete devices which can sense and protect. In this paper, we present a new NPT IGBT structure with ...integrated short-circuit protection. This structure is composed of an anode voltage sensor, a delay MOS transistor, a MOS transistor allowing IGBT turn-off and a Zener diode. The structure optimization depends on the flexible technological process developed for power structures and based on the functional integration concept
1. The protection structure optimization is presented and its functionality is verified by 2D simulations with ISE TCAD.
Power Amplifiers Lens, Dieter; Laier, Ulrich; Klingbeil, Harald
Springer eBooks,
2014, 20140613
Book Chapter
Open access
In this chapter, power amplifiers for synchrotron and storage ring RF systems are discussed. The main task of the power amplifier is to provide RF power to the synchrotron cavity. This is done by ...conversion from DC to RF power. The DC power is drawn from the Line powerline power by means of power supplies that are responsible for providing all voltages and currents that are required to operate the power amplifier.
Silicon Thyristors Baliga, B. Jayant
Advanced High Voltage Power Device Concepts,
06/2011
Book Chapter
As discussed in the textbook 1, the power thyristor was developed as a replacement for the thyratron, a vacuum tube used for power applications prior to the advent of solid-state devices. The simple ...construction of these structures using P-N junctions enabled commercialization of devices in the 1950s. These devices were found to be attractive from an applications viewpoint because they eliminated the need for the cumbersome filaments required in vacuum tubes and were much more rugged and smaller in size. The power thyristor provides both forward and reverse voltage blocking capability, making it well suited for AC power circuit applications. The device can be triggered from the forward-blocking off-state to the on-state by using a relatively small gate control current. Once triggered into the on-state, the thyristor remains stable in the on-state even without the gate drive current. In addition, the device automatically switches to the reverse-blocking off-state upon reversal of the voltage in an AC circuit. These features greatly simplify the gate control circuit, relative to that required for the power transistor, reducing its cost and size.
Silicon GTO Baliga, B. Jayant
Advanced High Voltage Power Device Concepts,
06/2011
Book Chapter
As discussed in the previous chapter, the thyristor structure contains a set of coupled transistors that provide a regenerative action during the conduction of current in the on-state. These devices ...are designed for operation in AC circuits where the anode voltage cycles between positive and negative values. The regenerative action is disrupted whenever the anode voltage reverses from positive to negative. The turn-off of the device then occurs with a reverse recovery process to establish blocking voltage capability. Such device structures are not suitable for applications in DC circuits unless expensive commutation circuits 1 are added to reverse the anode voltage polarity. The development of a thyristor structure that can be designed to turn on and turn off current flow under control by a gate signal in a DC circuit was motivated by this need. Such thyristors have been named gate turn-off (GTO) thyristors. The GTO is turned on in the same manner as the thyristor structures described in the previous chapter, while the turn-off for the GTO is accomplished by the application of a large reverse gate current. The gate current must be sufficient to remove stored charge from the P-base region and disrupt the regenerative action of the internal coupled transistors.
This work is devoted to development of the effective electron gun for the triode light sources. The electron gun is based on field emission cathode made of a bundle of PAN carbon fibers encapsulated ...into a glass capillary. The complex of researches on optimization of electron-optical system has been carried out.
Silicon MCT Baliga, B. Jayant
Advanced High Voltage Power Device Concepts,
06/2011
Book Chapter
As discussed in Chap. 5, the silicon insulated gate bipolar transistor (IGBT) has been a highly successful innovation that has been widely accepted by the industry for power control applications with ...supply voltages ranging from 300 to 6,000 V. As shown in that chapter, the optimization of the IGBT structure from an applications standpoint requires reduction of the lifetime in the drift region to enhance its switching speed. This is accompanied by a significant increase in the on-state voltage drop for the IGBT structure. The large on-state voltage drop in the IGBT structure for smaller lifetime values in the drift region can be traced to poor conductivity modulation of the drift region near the emitter. A superior on-state carrier distribution can be obtained by utilizing thyristor-based on-state current flow as shown in Chap. 2. The gate-turn-off thyristor (GTO) was developed to take advantage of the low on-state voltage drop. However, the gate drive current for the GTO is very large as demonstrated in Chap. 4.
Silicon BRT Baliga, B. Jayant
Advanced High Voltage Power Device Concepts,
06/2011
Book Chapter
As discussed in Chap. 8, there was a flurry of activity in the 1990s to explore the development of MOS-gated thyristor structures due to their reduced on-state voltage drop when compared with the ...IGBT structure. The base-resistance-controlled thyristor (BRT) structure was proposed 1, 2 to take advantage of thyristor-based on-state current flow under MOS gate control to reduce the gate drive requirements. In comparison with the MCT structure discussed in the previous chapter, the BRT structure had the advantage of using a double-diffusion process similar to that used to manufacture IGBT structures. A rigorous study to understand the physics of BRT operation and evaluate the performance of experimental devices with blocking voltages ranging from 600 to 5,000 V was conducted in the 1990s 3–9.
