As traditional silicon-based optoelectronic devices are approaching the performance limit, there is an urgent need for materials that complement silicon while being compatible with the conventional semiconductor processing steps. Graphene has the advantages of a broad absorption spectrum, high mobility, and a strong field effect. Adapting graphene in conventional silicon-based optoelectronic devices can extend the device functionality to broader application areas while alleviating their fundamental limitations. Here, we discuss the broadband graphene-silicon integrated imagers, emphasizing the importance of graphene integration with silicon that delivers unique advantages in the performance of broadband photodetection and imaging.