E-resources
Peer reviewed
-
Wang, Hsiang-Chun; Pu, Taofei; Li, Xiaobo; Liu, Chia-Hao; Wu, JunYe; Yang, Jiaying; Zhang, Ziyue; Lu, Youming; Wang, Qi; Song, Lijun; Chiu, Hsien-Chin; Ao, Jin-Ping; Liu, Xinke
IEEE transactions on electron devices, 09/2022, Volume: 69, Issue: 9Journal Article
A normally- OFF AlGaN/GaN high-electron-mobility transistor (HEMT) with p-GaN gate was fabricated on free-standing GaN substrate. The self-terminated etching technology was achieved by combining with AlN stop layer and SF 6 -based etching gas. Compared with HEMT on Si substrate (Si-HEMT), the HEMT on GaN substrate (GaN-HEMT) demonstrated the higher current density, lower subthreshold swing (SS), lower drain leakage current, and lower static and dynamic ON-resistance that were ascribed to the lower dislocation and less defect on free-standing GaN substrate. Meanwhile, the excellent <inline-formula> <tex-math notation="LaTeX">{V}_{\mathrm{th}} </tex-math></inline-formula> stability up to 175 °C and uniformity was demonstrated. Also, higher breakdown voltage (BV) of 683 V was measured, which was higher than 507 V for Si-HEMT. Hence, a normally- OFF AlGaN/GaN HEMT on free-standing GaN substrate shows good potential in power application.
Author
![loading ... loading ...](themes/default/img/ajax-loading.gif)
Shelf entry
Permalink
- URL:
Impact factor
Access to the JCR database is permitted only to users from Slovenia. Your current IP address is not on the list of IP addresses with access permission, and authentication with the relevant AAI accout is required.
Year | Impact factor | Edition | Category | Classification | ||||
---|---|---|---|---|---|---|---|---|
JCR | SNIP | JCR | SNIP | JCR | SNIP | JCR | SNIP |
Select the library membership card:
If the library membership card is not in the list,
add a new one.
DRS, in which the journal is indexed
Database name | Field | Year |
---|
Links to authors' personal bibliographies | Links to information on researchers in the SICRIS system |
---|
Source: Personal bibliographies
and: SICRIS
The material is available in full text. If you wish to order the material anyway, click the Continue button.