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Koyama, Koichi; Ohdaira, Keisuke; Matsumura, Hideki
2017 IEEE 44th Photovoltaic Specialist Conference (PVSC), 2017-JuneConference Proceeding
Back-contact amorphous-silicon (a-Si) /crystallinesilicon (c-Si) heterojunction appears the best structure to realize solar cells with the world top-class efficiency. However, the fabrication cost is a draw-back due to complicated patterning process for making nand pback-electrodes. To overcome it, we attempted to make n-a-Si islands in p-a-Si layers by plasma ionimplantation of phosphorus (P) atoms. We discovered that high temperature annealing was not necessary after plasma ionimplantation, contrary to ion implantation into c-Si, and we succeeded to convert p-type a-Si (p-a-Si)/intrinsic a-Si (i-a-Si)/c-Si hetero-structure to n-type a-Si (n-a-Si)/i-a-Si/c-Si without degradation of carrier lifetimes or heterojunction quality.
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