The GaN-based white light-emitting diode (LED), in which 4 × 4 arrayed micro-pixels are packaged using chip-on-board technique, is fabricated for both illumination and visible light communication. The features of the electrical, optical, and communication characteristics related to the injected current are analysed. It is implied that the saturated injected current could be the optimised injected current for both illumination and communication, if the highest light-output power (LOP) and the largest 3-dB modulation bandwidth are desired. However, in order to improve the electro-optic conversion efficiency (EOC) and the lifetime for practical devices, the huge current density should be avoided and a small injected current should be better. In our experiments, if the injected current is reduced from the saturated injected current of 130 mA (4597.8 A/ cm 2 ) to 20 mA (707.4 A/ cm 2 ), the EOC and the lifetime of 95% LOP are improved from 3.1 to 11.4% and extended from 16.5 to 1560 h, respectively, while the total LOP of arrayed pixels and the 3-dB modulation bandwidth are still good values. The characteristics before and after the ageing process with different injected current are also discussed. It is shown that the ageing process has permanent degradation of the electrical and optical performance but has little effects on the modulation bandwidth of the 60-μm-diameter micro-LEDs in the experiments. Moreover, the small injected current leads to minimal degradation and would be the preferred choice.