Long-wavelength luminescence from GaSb quantum dots grown on GaAs substrates

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Long-wavelength luminescence from GaSb quantum dots grown on GaAs substrates

Kudo, Makoto; Mishima, Tomoyoshi; Iwamoto, Satoshi; Nakaoka, Toshihiro; Arakawa, Yasuhiko

Physica. E, Low-dimensional systems & nanostructures, 03/2004, Volume: 21, Issue: 2

Journal Article

Self-assembled GaSb quantum dots (QDs) with a photoluminescence wavelength longer than 1.3 μm were successfully grown by suppressing the replacement of As and Sb on the surface of the GaSb QDs. This result means that GaSb can thus join InAs or GaInAs as a suitable material for QD lasers for optical communications.

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Kudo, Makoto | Mishima, Tomoyoshi | Iwamoto, Satoshi | Nakaoka, Toshihiro | Arakawa, Yasuhiko

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