Continuous-Wave Laser Lateral Crystallization of A-Si Thin Films on Polyimide Using a Heatsink Layer Embedded in the Buffer SiO2

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Continuous-Wave Laser Lateral Crystallization of A-Si Thin Films on Polyimide Using a Heatsink Layer Embedded in the Buffer SiO2

Sasaki, Nobuo; Arif, Muhammad; Uraoka, Yukiharu; Gotoh, Jun; Sugimoto, Shigeto

Journal of electronic materials, 06/2021, Volume: 50, Issue: 6

Journal Article

Continuous-wave laser crystallization of amorphous Si (a-Si) thin films on a polyimide (PI)-coated glass substrate is studied by using a single scan of a highly uniform top-flat line-beam with a 123 nm SiO 2 cap layer and a thin buffer layer at room temperature in air. The total buffer layer thickness is reduced to as thin as 1.55 μ m including the heatsink a-Si layer and two SiO 2 layers. Damage to the polyimide during the crystallization is successfully suppressed by the heatsink layer. An 88.3% {100} surface fraction is obtained for a 60-nm-thick Si thin film within 15° on polyimide even with a low scan velocity of 15 mm/s.

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Sasaki, Nobuo | Arif, Muhammad | Uraoka, Yukiharu | Gotoh, Jun | Sugimoto, Shigeto

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