Ion-irradiation damage on GaN p-n junction diodes by inductively coupled plasma etching and its recovery by thermal treatment

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Ion-irradiation damage on GaN p-n junction diodes by inductively coupled plasma etching and its recovery by thermal treatment

Ohta, Hiroshi; Horikiri, Fumimasa; Nakamura, Tohru; Mishima, Tomoyoshi

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 10/2017, Volume: 409

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Inductively coupled plasma dry etching has been proceeded to form high breakdown-voltage mesa-structured GaN p-n junction diodes for power electronics applications. Occurrences of crystalline damages were inevitable during the etching by accelerated reactive ions. However; the damages were removed by thermal treatment at 850°C, which lead low specific on-resistances (Ron<1mΩcm2) and high breakdown voltages (VB>4.2kV) of the diode.

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Ohta, Hiroshi | Horikiri, Fumimasa | Nakamura, Tohru | Mishima, Tomoyoshi

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