Herein, the Ni/SiO 2 /p-Si MIS diode was developed via the liquid phase epitaxy (LPE) process. The structural and surface morphology were investigated by XRD and SEM techniques. The electrical study of the device, Ni/SiO 2 /n-Si, demonstrates a worthy rectification and the electrical parameters of the Schottky diode have computed using the I-V characterization. Different dielectric parameters as capacitance ( C ), permittivity ( ε’ ), dielectric loss ( ε” ), conductance and ac conductivity ( σ ac ) were evaluated. Moreover, their relation to bias dc voltage has been examined in the frequency range 10 Hz–20 MHz, temperature 303 K to 363 K and DC bias voltage from -2 V to 2 V. Also, the variable investigated parameters were found to be dependent upon temperature, frequency and bias voltage.