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Takino, Junichi; Sumi, Tomoaki; Okayama, Yoshio; Kitamoto, Akira; Imanishi, Masayuki; Yoshimura, Masashi; Asai, Naomi; Ohta, Hiroshi; Mishima, Tomoyoshi; Mori, Yusuke
Applied physics express, 07/2020, Volume: 13, Issue: 7Journal Article
Low dislocation density and low-resistance GaN wafers are in high demand for improving the performance of vertical GaN power devices. Recently, GaN wafers with the dislocation density of 8.8 × 104 cm−2 and the resistivity of 7.8 × 10−4 cm, were fabricated using oxide vapor phase epitaxy (OVPE). In this study, GaN p-n diodes on GaN wafers prepared by the OVPE method were evaluated for verifying their suitability as vertical GaN power devices. An extremely low-differential specific on-resistance of 0.08 m cm2 and a high breakdown voltage of 1.8 kV were obtained from forward and reverse I-V measurements.
