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Mingda Zhu; Bo Song; Meng Qi; Zongyang Hu; Nomoto, Kazuki; Xiaodong Yan; Yu Cao; Johnson, Wayne; Kohn, Erhard; Jena, Debdeep; Xing, Huili Grace
IEEE electron device letters, 04/2015, Volume: 36, Issue: 4Journal Article
In this letter, we present AlGaN/GaN lateral Schottky barrier diodes on silicon with recessed anodes and dual field plates. A low specific ON-resistance R ON,SP (5.12 mQ · cm 2 ), a low turn-ON voltage (<; 0.7 V), and a high reverse breakdown voltage (BV) (>1.9 kV) were simultaneously achieved in devices with a 25-μm anode/cathode distance, resulting in a power figure-of-merit BV 2 /R ON,SP of 727 MW · cm -2 . The record high BV of 1.9 kV is attributed to the dual field-plate structure.
