Influence of antimony (Sb) as a surfactant and annealing on the structural and optical properties of InGaAsN/GaAs multiple quantum-well (MQW) grown by metalorganic chemical vapor deposition (MOCVD) is studied. It was found that an increase in compressive strain from an analysis of the satellite peaks in high-resolution X-ray diffraction was observed with increasing interruption time and annealing temperature. The photocurrent (PC) peak of as-grown MQW is blue-shifted with introduction time of excess Sb flux during growth interruption process. It seems to be due to the improvement of structure properties at interface by a surfactant suppressing surface diffusion phenomenon. After annealing process, the PC peak is blue-shifted with increasing annealing temperature for all samples. It seems to be related with the compressive strain and QW intermixing.