E-resources
Peer reviewed
-
Nomoto, Kazuki; Hatakeyama, Yoshitomo; Katayose, Hideo; Kaneda, Naoki; Mishima, Tomoyoshi; Nakamura, Tohru
Physica status solidi. A, Applications and materials science, July 2011, Volume: 208, Issue: 7Journal Article
This report describes the fabrication and characteristics of GaN p–n junction diodes on free‐standing GaN substrates with low dislocation density. We have demonstrated GaN p–n junction diodes with a unique field‐plate (FP) structure. The breakdown voltage VB is further improved due to the FP structure and the low dislocation density. The breakdown voltage of a diode of 60 µm in diameter with the FP structure is over −1000 V, and the leakage current is below 10−9 A until reaching the breakdown voltage. Even in larger diodes (100 and 200 µm in diameter) with FP, the breakdown voltage is over −800 V. However, the specific on‐resistance Ron is high due to damage by the plasma process of sputtering. The specific on‐resistance is further improved due to using a low damage passivation film. As a result, a specific on‐resistance of 1.2 mΩ · cm2 is obtained.
![loading ... loading ...](themes/default/img/ajax-loading.gif)
Shelf entry
Permalink
- URL:
Impact factor
Access to the JCR database is permitted only to users from Slovenia. Your current IP address is not on the list of IP addresses with access permission, and authentication with the relevant AAI accout is required.
Year | Impact factor | Edition | Category | Classification | ||||
---|---|---|---|---|---|---|---|---|
JCR | SNIP | JCR | SNIP | JCR | SNIP | JCR | SNIP |
Select the library membership card:
If the library membership card is not in the list,
add a new one.
DRS, in which the journal is indexed
Database name | Field | Year |
---|
Links to authors' personal bibliographies | Links to information on researchers in the SICRIS system |
---|
Source: Personal bibliographies
and: SICRIS
The material is available in full text. If you wish to order the material anyway, click the Continue button.