Low-Voltage Ring Oscillators Based on Polyelectrolyte-Gated Polymer Thin-Film Transistors

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Low-Voltage Ring Oscillators Based on Polyelectrolyte-Gated Polymer Thin-Film Transistors

Herlogsson, Lars; Cölle, Michael; Tierney, Steven; Crispin, Xavier; Berggren, Magnus

Advanced materials (Weinheim), January 5, 2010, Volume: 22, Issue: 1

Journal Article

A polyanionic electrolyte is used as gate insulator in top‐gate p‐channel polymer thin‐film transistors. The high capacitance of the polyelectrolyte film allows the transistors and integrated circuits to operate below 1.5 V. Seven‐stage ring oscillators that operate at supply voltages down to 0.9 V and exhibit signal propagation delays as low as 300 µs per stage are reported.

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Herlogsson, Lars | Cölle, Michael | Tierney, Steven | Crispin, Xavier | Berggren, Magnus

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