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Cheema, Suraj S; Kwon, Daewoong; Shanker, Nirmaan; Dos Reis, Roberto; Hsu, Shang-Lin; Xiao, Jun; Zhang, Haigang; Wagner, Ryan; Datar, Adhiraj; McCarter, Margaret R; Serrao, Claudy R; Yadav, Ajay K; Karbasian, Golnaz; Hsu, Cheng-Hsiang; Tan, Ava J; Wang, Li-Chen; Thakare, Vishal; Zhang, Xiang; Mehta, Apurva; Karapetrova, Evguenia; Chopdekar, Rajesh V; Shafer, Padraic; Arenholz, Elke; Hu, Chenming; Proksch, Roger; Ramesh, Ramamoorthy; Ciston, Jim; Salahuddin, Sayeef
Nature (London), 04/2020, Volume: 580, Issue: 7804Journal Article
Ultrathin ferroelectric materials could potentially enable low-power perovskite ferroelectric tetragonality logic and nonvolatile memories . As ferroelectric materials are made thinner, however, the ferroelectricity is usually suppressed. Size effects in ferroelectrics have been thoroughly investigated in perovskite oxides-the archetypal ferroelectric system . Perovskites, however, have so far proved unsuitable for thickness scaling and integration with modern semiconductor processes . Here we report ferroelectricity in ultrathin doped hafnium oxide (HfO ), a fluorite-structure oxide grown by atomic layer deposition on silicon. We demonstrate the persistence of inversion symmetry breaking and spontaneous, switchable polarization down to a thickness of one nanometre. Our results indicate not only the absence of a ferroelectric critical thickness but also enhanced polar distortions as film thickness is reduced, unlike in perovskite ferroelectrics. This approach to enhancing ferroelectricity in ultrathin layers could provide a route towards polarization-driven memories and ferroelectric-based advanced transistors. This work shifts the search for the fundamental limits of ferroelectricity to simpler transition-metal oxide systems-that is, from perovskite-derived complex oxides to fluorite-structure binary oxides-in which 'reverse' size effects counterintuitively stabilize polar symmetry in the ultrathin regime.
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