Epitaxial Ti3GeC2 thin films were deposited on 4° off-cut 4H-SiC(0001) using magnetron sputtering from high purity Ti, C, and Ge targets. Scanning electron microscopy and helium ion microscopy show that the Ti3GeC2 films grow by lateral step-flow with {112̄0} faceting on the SiC surface. Using elastic recoil detection analysis, atomic force microscopy, and X-Ray diffraction the films were found to be substoichiometric in Ge with the presence of small Ge particles at the surface of the film. ► Epitaxial growth of Ti3GeC2(0001) on 4H-SiC(0001) using magnetron sputtering. ► Ti3GeC2 films grow by lateral step-flow with {112̄0} faceting on the SiC surface. ► Films are substoichiometric in Ge with small Ge particles present at the surface.