Formation of definite GaN p–n junction by Mg-ion implantation to n−-GaN epitaxial layers grown on a high-quality free-standing GaN substrate

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Formation of definite GaN p–n junction by Mg-ion implantation to n−-GaN epitaxial layers grown on a high-quality free-standing GaN substrate

Oikawa, Takuya; Saijo, Yusuke; Kato, Shigeki; Mishima, Tomoyoshi; Nakamura, Tohru

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 12/2015, Volume: 365

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P-type conversion of n−-GaN by Mg-ion implantation was successfully performed using high quality GaN epitaxial layers grown on free-standing low-dislocation-density GaN substrates. These samples showed low-temperature PL spectra quite similar to those observed from Mg-doped MOVPE-grown p-type GaN, consisting of Mg related donor–acceptor pair (DAP) and acceptor bound exciton (ABE) emission. P–n diodes fabricated by the Mg-ion implantation showed clear rectifying I–V characteristics and UV and blue light emissions were observed at forward biased conditions for the first time.

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Oikawa, Takuya | Saijo, Yusuke | Kato, Shigeki | Mishima, Tomoyoshi | Nakamura, Tohru

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