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Zhai, Li; Gebre, Sara T; Chen, Bo; Xu, Dan; Chen, Junze; Li, Zijian; Liu, Yawei; Yang, Hua; Ling, Chongyi; Ge, Yiyao; Zhai, Wei; Chen, Changsheng; Ma, Lu; Zhang, Qinghua; Li, Xuefei; Yan, Yujie; Huang, Xinyu; Li, Lujiang; Guan, Zhiqiang; Tao, Chen-Lei; Huang, Zhiqi; Wang, Hongyi; Liang, Jinze; Zhu, Ye; Lee, Chun-Sing; Wang, Peng; Zhang, Chunfeng; Gu, Lin; Du, Yonghua; Lian, Tianquan; Zhang, Hua; Wu, Xue-Jun
Nature communications, 05/2023, Volume: 14, Issue: 1Journal Article
Epitaxial growth is one of the most commonly used strategies to precisely tailor heterostructures with well-defined compositions, morphologies, crystal phases, and interfaces for various applications. However, as epitaxial growth requires a small interfacial lattice mismatch between the components, it remains a challenge for the epitaxial synthesis of heterostructures constructed by materials with large lattice mismatch and/or different chemical bonding, especially the noble metal-semiconductor heterostructures. Here, we develop a noble metal-seeded epitaxial growth strategy to prepare highly symmetrical noble metal-semiconductor branched heterostructures with desired spatial configurations, i.e., twenty CdS (or CdSe) nanorods epitaxially grown on twenty exposed (111) facets of Ag icosahedral nanocrystal, albeit a large lattice mismatch (more than 40%). Importantly, a high quantum yield (QY) of plasmon-induced hot-electron transferred from Ag to CdS was observed in epitaxial Ag-CdS icosapods (18.1%). This work demonstrates that epitaxial growth can be achieved in heterostructures composed of materials with large lattice mismatches. The constructed epitaxial noble metal-semiconductor interfaces could be an ideal platform for investigating the role of interfaces in various physicochemical processes.
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