The textured surfaces to reduce light reflectivity by using acid-alkali chemical etching and SiNx films are generally necessary for commercial crystalline silicon solar cells. However, this etching process requires a large amount of environmentally harmful acid-alkali solution and has limited options for texture and size. To overcome these disadvantages, a new anti-reflection strategy is proposed in this study, which is using soft nanoimprint lithography to prepare the textured structures on the outside of the SiNx films. The polyurethane with a high refractive index of 1.64 is selected as the texture material, and different templates are selected to prepare it into different light trapping structures, including positive-inverted pyramids, inverted lace cones, and positive-inverted moth-eye nanostructures allowing for easy customization of the textured structures. The finite element simulation and experiments demonstrate that these light trapping structures have a wide spectrum anti-reflection performance in visible and near-infrared bands. With the back surface of the commercial passivated emitter rear contact (PERC) bi-facial solar cells as the imprint substrates, some light trapping structures can reduce the surface weighted average light reflectivity (Rw) at the band of 300–1200 nm from 18.31% to less than 10% and the optimal structures can reduce Rw to 8.71%. This anti-reflection strategy can also be applied to thin-film solar cells and crystalline silicon solar cells of other structures, such as HIT, Topcon, Perovskite/c-Si tandem, and so forth, which shows great development potential. Display omitted •New texture structure design: prepare texture on the outside of flat SiNx film.•Soft nanoimprint lithography facilitates custom texture.•Applying PU can easily adjust the refractive index and imprint various structures.•Texture does not affect the electrical performance of the solar cells.