In spin Hall nano-oscillators (SHNOs), pure spin currents drive local regions of magnetic films and nanostructures into auto-oscillating precession. If such regions are placed in close proximity to ...each other they can interact and may mutually synchronize. Here, we demonstrate robust mutual synchronization of two-dimensional SHNO arrays ranging from 2 × 2 to 8 × 8 nano-constrictions, observed both electrically and using micro-Brillouin light scattering microscopy. On short time scales, where the auto-oscillation linewidth Formula: see text is governed by white noise, the signal quality factor, Formula: see text, increases linearly with the number of mutually synchronized nano-constrictions (N), reaching 170,000 in the largest arrays. We also show that SHNO arrays exposed to two independently tuned microwave frequencies exhibit the same synchronization maps as can be used for neuromorphic vowel recognition. Our demonstrations may hence enable the use of SHNO arrays in two-dimensional oscillator networks for high-quality microwave signal generation and ultra-fast neuromorphic computing.
Synchronization of large spin Hall nano-oscillator (SHNO) arrays is an appealing approach toward ultrafast non-conventional computing. However, interfacing to the array, tuning its individual ...oscillators and providing built-in memory units remain substantial challenges. Here, we address these challenges using memristive gating of W/CoFeB/MgO/AlO
-based SHNOs. In its high resistance state, the memristor modulates the perpendicular magnetic anisotropy at the CoFeB/MgO interface by the applied electric field. In its low resistance state the memristor adds or subtracts current to the SHNO drive. Both electric field and current control affect the SHNO auto-oscillation mode and frequency, allowing us to reversibly turn on/off mutual synchronization in chains of four SHNOs. We also demonstrate that two individually controlled memristors can be used to tune a four-SHNO chain into differently synchronized states. Memristor gating is therefore an efficient approach to input, tune and store the state of SHNO arrays for non-conventional computing models.
Spin Hall nano-oscillators (SHNOs) are emerging spintronic devices for microwave signal generation and oscillator-based neuromorphic computing combining nano-scale footprint, fast and ultra-wide ...microwave frequency tunability, CMOS compatibility, and strong non-linear properties providing robust large-scale mutual synchronization in chains and two-dimensional arrays. While SHNOs can be tuned via magnetic fields and the drive current, neither approach is conducive to individual SHNO control in large arrays. Here, we demonstrate electrically gated W/CoFeB/MgO nano-constrictions in which the voltage-dependent perpendicular magnetic anisotropy tunes the frequency and, thanks to nano-constriction geometry, drastically modifies the spin-wave localization in the constriction region resulting in a giant 42% variation of the effective damping over four volts. As a consequence, the SHNO threshold current can be strongly tuned. Our demonstration adds key functionality to nano-constriction SHNOs and paves the way for energy-efficient control of individual oscillators in SHNO chains and arrays for neuromorphic computing.
Spin torque and spin Hall effect nano-oscillators generate high intensity spin wave auto-oscillations on the nanoscale enabling novel microwave applications in spintronics, magnonics, and ...neuromorphic computing. For their operation, these devices require externally generated spin currents either from an additional ferromagnetic layer or a material with a high spin Hall angle. Here we demonstrate highly coherent field and current tunable microwave signals from nano-constrictions in single 15-20 nm thick permalloy layers with oxide interfaces. Using a combination of spin torque ferromagnetic resonance measurements, scanning micro-Brillouin light scattering microscopy, and micromagnetic simulations, we identify the auto-oscillations as emanating from a localized edge mode of the nano-constriction driven by spin-orbit torques. Our results pave the way for greatly simplified designs of auto-oscillating nano-magnetic systems only requiring single ferromagnetic layers with oxide interfaces.
We use micromagnetic simulations to map out and compare the linear and auto-oscillating modes in constriction-based spin Hall nano-oscillators as a function of the applied magnetic field with a ...varying magnitude and out-of-plane angle. We demonstrate that, for all possible applied field configurations, the auto-oscillations emerge from the localized linear modes of the constriction. For field directions tending towards the plane, these modes are of the so-called edge type, i.e., localized at the opposite edges of the constriction. By contrast, when the magnetization direction approaches the film normal, the modes transform to the so-called bulk type, i.e., localized inside the constriction with substantially increased precession volume, consistent with the redistribution of the magnetic charges from the edges to the top and bottom surfaces of the constriction. In general, the threshold current of the corresponding auto-oscillations increases with the applied field strength and decreases with its out-of-plane angle, consistent with the behavior of the internal field and in good agreement with a macrospin model. A quantitative agreement is then achieved by taking into account the strongly nonuniform character of the system via a mean-field approximation. Both the Oersted (Oe) field and the spin-transfer torque from the drive current increase the localization and decrease the frequency of the observed mode. Furthermore, the antisymmetric Oe field breaks the lateral symmetry, favoring the localized mode at one of the two constriction edges, particularly for large out-of-plane field angles where the threshold current is significantly increased and the edge demagnetization is suppressed.
Toward a Universal Memory Akerman, Johan
Science (American Association for the Advancement of Science),
04/2005, Letnik:
308, Številka:
5721
Journal Article
Recenzirano
When it comes to computers, MP3 players, digital cameras, and other electronic gadgets, there is no such thing as too much memory. Today's dominant solid-state memory technologies---static RAM, ...dynamic RAM, and Flash---have been around for a long time. Here, Akerman explores the different advantages and disadvantages of these three technologies.
Through detailed experimental studies of the angular dependence of spin wave excitations in nanocontact-based spin-torque oscillators, we demonstrate that two distinct spin wave modes can be excited, ...with different frequency, threshold currents, and frequency tunability. Using analytical theory and micromagnetic simulations we identify one mode as an exchange-dominated propagating spin wave, and the other as a self-localized nonlinear spin wave bullet. Wavelet-based analysis of the simulations indicates that the apparent simultaneous excitation of both modes results from rapid mode hopping induced by the Oersted field.
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