Hot-carrier induced degradation is a main issue in the electrical stability of polysilicon TFTs and drain field relief architectures have been introduced, such as lightly doped drain (LDD) and gate ...overlapped LDD (GOLDD), to improve the stability. Bias-stress experiments were performed on both LDD and GOLDD structures, biasing the devices above pinch-off at constant
V
g and different
V
ds. While the LDD structure presented considerable hot-carrier induced degradation, GOLDD devices were characterised by a very high electrical stability. To explain such a difference in electrical stability, we first analysed the spatial distributions of the electric fields, which are lower in GOLDD structures. In addition, we developed a new model to describe the hot-carrier induced degradation, based on the correlation between hot carrier injection currents and interface state generation. Indeed, hot carrier injection is known to produce interface states and oxide trapped charge, and, depending upon their spatial distribution, can strongly influence the local electric fields as well as the current. The proposed model nicely reproduces the degraded characteristics, thus providing indications on the spatial distribution of the generated interface states.
This Letter reports new results from the MINOS experiment based on a two-year exposure to muon neutrinos from the Fermilab NuMI beam. Our data are consistent with quantum-mechanical oscillations of ...neutrino flavor with mass splitting |Deltam2| = (2.43+/-0.13) x 10(-3) eV2 (68% C.L.) and mixing angle sin2(2theta) > 0.90 (90% C.L.). Our data disfavor two alternative explanations for the disappearance of neutrinos in flight: namely, neutrino decays into lighter particles and quantum decoherence of neutrinos, at the 3.7 and 5.7 standard-deviation levels, respectively.
The technology for the fabrication of poly-Si TFTs on glass substrates has now reached a level of maturity such that the first commercial products are becoming available. The technology choice will ...be briefly reviewed and the reasons for the preferred use of excimer laser crystallisation will be summarised. Some of the key device and technology issues will be reviewed in this paper, including the role of the incident laser energy density in fabricating high performance TFTs and its dependence on film thickness. The issues discussed above have determined our design and fabrication of poly-Si AMLCDs and the results obtained from a 2-inch array, with full drive circuit integration, are illustrated.
We searched for a sidereal modulation in the MINOS far detector neutrino rate. Such a signal would be a consequence of Lorentz and CPT violation as described by the standard-model extension ...framework. It also would be the first detection of a perturbative effect to conventional neutrino mass oscillations. We found no evidence for this sidereal signature, and the upper limits placed on the magnitudes of the Lorentz and CPT violating coefficients describing the theory are an improvement by factors of 20-510 over the current best limits found by using the MINOS near detector.
Hot-carrier injection is known to produce interface states and oxide trapped charge, which, depending upon their spatial distribution, can strongly influence the local electric fields as well as the ...current flow. In this work, we analyze the hot carrier-induced degradation of gate overlapped lightly doped drain (GOLDD) polysilicon thin film transistors (TFTs) and a new model, which correlates the interface state generation with the hot carrier injection current, is proposed. The defect generation rate has been assumed to depend upon the product of hot electron and hole currents J/sub eh/, and the resulting interface state distribution has been evaluated self-consistently with the current density and carrier concentration distributions. By successive iterations, a complete spatial and time evolution of the interface state distribution has been determined, and the electrical characteristics, calculated with these interface state distributions are in good agreement with the experimental data.
We report an improved measurement of ν(μ) disappearance over a distance of 735 km using the MINOS detectors and the Fermilab Main Injector neutrino beam in a ν(μ)-enhanced configuration. From a total ...exposure of 2.95×10(20) protons on target, of which 42% have not been previously analyzed, we make the most precise measurement of Δm2=2.62(-0.28)(+0.31)(stat)±0.09(syst)×10(-3) eV2 and constrain the ν(μ) mixing angle sin2(2θ)>0.75 (90% C.L.). These values are in agreement with Δm2 and sin2(2θ) measured for ν(μ), removing the tension reported in P. Adamson et al. (MINOS), Phys. Rev. Lett. 107, 021801 (2011)..
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