π-Conjugated two-dimensional covalent organic frameworks (2D COFs) are emerging as a novel class of electroactive materials for (opto)electronic and chemiresistive sensing applications. However, ...understanding the intricate interplay between chemistry, structure, and conductivity in π-conjugated 2D COFs remains elusive. Here, we report a detailed characterization for the electronic properties of two novel samples consisting of Zn– and Cu–phthalocyanine-based pyrazine-linked 2D COFs. These 2D COFs are synthesized by condensation of metal–phthalocyanine (M = Zn and Cu) and pyrene derivatives. The obtained polycrystalline-layered COFs are p-type semiconductors both with a band gap of ∼1.2 eV. A record device-relevant mobility up to ∼5 cm2/(V s) is resolved in the dc limit, which represents a lower threshold induced by charge carrier localization at crystalline grain boundaries. Hall effect measurements (dc limit) and terahertz (THz) spectroscopy (ac limit) in combination with density functional theory (DFT) calculations demonstrate that varying metal center from Cu to Zn in the phthalocyanine moiety has a negligible effect in the conductivity (∼5 × 10–7 S/cm), charge carrier density (∼1012 cm–3), charge carrier scattering rate (∼3 × 1013 s–1), and effective mass (∼2.3m 0) of majority carriers (holes). Notably, charge carrier transport is found to be anisotropic, with hole mobilities being practically null in-plane and finite out-of-plane for these 2D COFs.
Metal-organic frameworks (MOFs) are hybrid materials based on crystalline coordination polymers that consist of metal ions connected by organic ligands. In addition to the traditional applications in ...gas storage and separation or catalysis, the long-range crystalline order in MOFs, as well as the tunable coupling between the organic and inorganic constituents, has led to the recent development of electrically conductive MOFs as a new generation of electronic materials. However, to date, the nature of charge transport in the MOFs has remained elusive. Here we demonstrate, using high-frequency terahertz photoconductivity and Hall effect measurements, Drude-type band-like transport in a semiconducting, π-d conjugated porous Fe
(THT)
(NH
)
(THT, 2,3,6,7,10,11-triphenylenehexathiol) two-dimensional MOF, with a room-temperature mobility up to ~ 220 cm
V
s
. The temperature-dependent conductivity reveals that this mobility represents a lower limit for the material, as mobility is limited by impurity scattering. These results illustrate the potential for high-mobility semiconducting MOFs as active materials in thin-film optoelectronic devices.
The realization of ferromagnetism in semiconductors is an attractive avenue for the development of spintronic applications. Here, we report a semiconducting layered metal-organic framework (MOF), ...namely K
Fe
(2,3,9,10,16,17,23,24-octahydroxy phthalocyaninato)Fe (K
Fe
PcFe-O
) with spontaneous magnetization. This layered MOF features in-plane full π-d conjugation and exhibits semiconducting behavior with a room temperature carrier mobility of 15 ± 2 cm
V
s
as determined by time-resolved Terahertz spectroscopy. Magnetization experiments and
Fe Mössbauer spectroscopy demonstrate the presence of long-range magnetic correlations in K
Fe
PcFe-O
arising from the magnetic coupling between iron centers via delocalized π electrons. The sample exhibits superparamagnetic features due to a distribution of crystal size and possesses magnetic hysteresis up to 350 K. Our work sets the stage for the development of spintronic materials exploiting magnetic MOF semiconductors.
Single‐layer and multi‐layer 2D polyimine films have been achieved through interfacial synthesis methods. However, it remains a great challenge to achieve the maximum degree of crystallinity in the ...2D polyimines, which largely limits the long‐range transport properties. Here we employ a surfactant‐monolayer‐assisted interfacial synthesis (SMAIS) method for the successful preparation of porphyrin and triazine containing polyimine‐based 2D polymer (PI‐2DP) films with square and hexagonal lattices, respectively. The synthetic PI‐2DP films are featured with polycrystalline multilayers with tunable thickness from 6 to 200 nm and large crystalline domains (100–150 nm in size). Intrigued by high crystallinity and the presence of electroactive porphyrin moieties, the optoelectronic properties of PI‐2DP are investigated by time‐resolved terahertz spectroscopy. Typically, the porphyrin‐based PI‐2DP 1 film exhibits a p‐type semiconductor behavior with a band gap of 1.38 eV and hole mobility as high as 0.01 cm2 V−1 s−1, superior to the previously reported polyimine based materials.
Three crystalline imine‐based 2D polymer films are prepared by surfactant‐monolayer‐assisted interfacial synthesis (SMAIS). The synthetic PI‐2DP films feature polycrystalline multilayers with tunable thickness from 6 to 200 nm and large crystalline domains (100–150 nm in size) and exhibit p‐type semiconductor behavior with a band gap of 1.38 eV.
We explore the charge transport properties of phytic acid (PA) doped polyaniline thin films prepared by the surfactant monolayer‐assisted interfacial synthesis (SMAIS). Structural and elemental ...analysis confirms the inclusion of PA in the thin films and reveals a progressive loss of crystallinity with the increase of PA doping content. Charge transport properties are interrogated by time‐resolved terahertz (THz) spectroscopy. Notably, independently of doping content and hence crystallinity, the frequency‐resolved complex conductivity spectra in the THz region can be properly described by the Drude model, demonstrating band‐like charge transport in the samples and state‐of‐the‐art charge carrier mobilities of ≈1 cm2V−1s−1. A temperature‐dependent analysis for the conductivity further supports band‐like charge transport and suggest that charge carrier mobility is primarily limited by impurity scattering. This work highlights the potential of PA doped polyaniline for organic electronics.
The interplay between conductivity and structure in polyaniline thin films doped by phytic acid is analyzed. While samples become less crystalline with doping content, even becoming amorphous, the conductivity for all samples is properly described using the Drude model. Temperature dependent analysis excludes the presence of thermally activated processes and suggest free charge carrier mobility being limited by impurity scattering.
The bandgap of CuIn
Ga
Se
(CIGS) chalcopyrite semiconductors can be tuned between ≈1.0 and ≈1.7 eV for Ga contents ranging between x = 0 and x = 1. While an optimum bandgap of 1.34 eV is desirable ...for achieving maximum solar energy conversion in solar cells, state-of-the-art CIGS-based devices experience a drop in efficiency for Ga contents x > 0.3 (i.e., for bandgaps >1.2 eV), an aspect that is limiting the full potential of these devices. The mechanism underlying the limited performance as a function of CIGS composition has remained elusive: both surface and bulk recombination effects are proposed. Here, the disentanglement between surface and bulk effects in CIGS absorbers as a function of Ga content is achieved by comparing photogenerated charge carrier dynamics in air/CIGS and surface-passivated ZnO/CdS/CIGS samples. While surface passivation prevents surface recombination of charge carriers for low Ga content (x < 0.3; up to 1.2 eV bandgap), surface recombination dominates for higher-bandgap materials. The results thus demonstrate that surface, rather than bulk effects, is responsible for the drop in efficiency for Ga contents larger than x ≈ 0.3.
Single‐layer and multi‐layer 2D polyimine films have been achieved through interfacial synthesis methods. However, it remains a great challenge to achieve the maximum degree of crystallinity in the ...2D polyimines, which largely limits the long‐range transport properties. Here we employ a surfactant‐monolayer‐assisted interfacial synthesis (SMAIS) method for the successful preparation of porphyrin and triazine containing polyimine‐based 2D polymer (PI‐2DP) films with square and hexagonal lattices, respectively. The synthetic PI‐2DP films are featured with polycrystalline multilayers with tunable thickness from 6 to 200 nm and large crystalline domains (100–150 nm in size). Intrigued by high crystallinity and the presence of electroactive porphyrin moieties, the optoelectronic properties of PI‐2DP are investigated by time‐resolved terahertz spectroscopy. Typically, the porphyrin‐based PI‐2DP 1 film exhibits a p‐type semiconductor behavior with a band gap of 1.38 eV and hole mobility as high as 0.01 cm2 V−1 s−1, superior to the previously reported polyimine based materials.
Drei kristalline Imin‐basierte 2D‐Polymerfilme wurden durch tensidmonolagenunterstützte Grenzflächensynthese (SMAIS) hergestellt. Die synthetischen PI‐2DP‐Filme sind mit polykristallinen Mehrfachlagen mit abstimmbarer Dicke von 6–200 nm und großen kristallinen Domänen (100–150 nm) ausgestattet und weisen p‐Halbleiterverhalten mit einer Bandlücke von 1.38 eV auf.
Two-dimensional conjugated covalent organic frameworks (2D c-COFs) are emerging as a unique class of semiconducting 2D conjugated polymers for (opto)electronics and energy storage. Doping is one of ...the common, reliable strategies to control the charge carrier transport properties, but the precise mechanism underlying COF doping has remained largely unexplored. Here we demonstrate molecular iodine doping of a metal–phthalocyanine-based pyrazine-linked 2D c-COF. The resultant 2D c-COF ZnPc-pz-I 2 maintains its structural integrity and displays enhanced conductivity by 3 orders of magnitude, which is the result of elevated carrier concentrations. Remarkably, Hall effect measurements reveal enhanced carrier mobility reaching ∼22 cm2 V–1 s–1 for ZnPc-pz-I 2 , which represents a record value for 2D c-COFs in both the direct-current and alternating-current limits. This unique transport phenomenon with largely increased mobility upon doping can be traced to increased scattering time for free charge carriers, indicating that scattering mechanisms limiting the mobility are mitigated by doping. Our work provides a guideline on how to assess doping effects in COFs and highlights the potential of 2D c-COFs to display high conductivities and mobilities toward novel (opto)electronic devices.
Metal–organic frameworks (MOFs) are porous hybrid materials built up from organic ligands coordinated to metal ions or clusters by means of self-assembly strategies. The peculiarity of these ...materials is the possibility, according to specific synthetic routes, to manipulate both the composition and ligands arrangement in order to control their optical and energy-transport properties. Therefore, optimized MOFs nanocrystals (nano-MOFs) can potentially represent the next generation of luminescent materials with features similar to those of their inorganic predecessors, that is, the colloidal semiconductor quantum dots. The luminescence of fluorescent nano-MOFs is generated through the radiative recombination of ligand molecular excitons. The uniqueness of these nanocrystals is the possibility to pack the ligand chromophores close enough to allow a fast exciton diffusion but sufficiently far from each other preventing the aggregation-induced effects of the organic crystals. In particular, the formation of strongly coupled dimers or excimers is avoided, thus preserving the optical features of the isolated molecule. However, nano-MOFs have a very small fluorescence quantum yield (QY). In order to overcome this limitation and achieve highly emitting systems, we analyzed the fluorescence process in blue emitting nano-MOFs and modeled the diffusion and quenching mechanism of photogenerated singlet excitons. Our results demonstrate that the excitons quenching in nano-MOFs is mainly due to the presence of surface-located, nonradiative recombination centers. In analogy with their inorganic counterparts, we found that the passivation of the nano-MOF surfaces is a straightforward method to enhance the emission efficiency. By embedding the nanocrystals in an inert polymeric host, we observed a +200% increment of the fluorescence QY, thus recovering the emission properties of the isolated ligand in solution.
Electron transfer at a donor–acceptor quantum dot–metal oxide interface is a process fundamentally relevant to solar energy conversion architectures as, e.g., sensitized solar cells and solar fuels ...schemes. As kinetic competition at these technologically relevant interfaces largely determines device performance, this Review surveys several aspects linking electron transfer dynamics and device efficiency; this correlation is done for systems aiming for efficiencies up to and above the ∼33% efficiency limit set by Shockley and Queisser for single gap devices. Furthermore, we critically comment on common pitfalls associated with the interpretation of kinetic data obtained from current methodologies and experimental approaches, and finally, we highlight works that, to our judgment, have contributed to a better understanding of the fundamentals governing electron transfer at quantum dot–metal oxide interfaces.
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