In this paper we present the numerical simulation of silicon detectors with internal gain as the main tool for 4-dimensional (4D) particle trackers design and optimization. The Low-Gain Avalanche ...Diode (LGAD) technology and its present limitations are reviewed with the aim of introducing the Resistive AC-Coupled Silicon Detectors (RSD) paradigm as a case study of our investigation. Authors here present Spice-like and 2D/3D Technological Computer-Aided Design (TCAD) simulations to characterize sensors in terms of both their electrostatic behavior, capacitive (dynamic) coupling and radiation-hardness performances, showing the methodological approach used in order to extract the set of layout rules allowing the release of RSD1, the incoming production run at Fondazione Bruno Kessler (FBK) of next-generation silicon detectors for 4D tracking with intrinsic 100% fill-factor.
Design optimization of the UFSD inter-pad region Siviero, F.; Arcidiacono, R.; Borghi, G. ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
April 2024, 2024-04-00, 2024-04-01, Letnik:
1061, Številka:
C
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This paper reports on a measurement campaign to characterize the inter-pad region of Ultra-Fast Silicon Detectors (UFSDs) manufactured by Fondazione Bruno Kessler. The devices under test are either ...pixel or strip arrays, featuring a large number of different inter-pad layouts; both pre-irradiation and irradiated sensors have been measured. The aim of the study is to link the design parameters of the inter-pad region to the operation of the sensors, providing insights into the design of UFSD arrays with narrow inter-pad gaps. We concluded that, in the UFSD design, the doping level and the area of the p-stop should be kept low, in order to avoid the early breakdown of the device and the micro-discharges effect; UFSDs with such characteristics proved also rather insensitive to floating pads and irradiation. Thanks to these findings, it was possible to design a UFSD array that yields the expected performance with an inter-pad width as small as 25 μm, significantly improving its fill factor with respect to standard designs. Two innovative experimental techniques are presented in this work: the first one is based on a TCT setup, the second makes use of an ultra-low light CCD camera.
Three-dimensional detectors for neutron imaging Mendicino, R.; Dalla Betta, G.-F.
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
01/2018, Letnik:
878
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Solid-state sensors fabricated with 3D technologies and coupled to different neutron converter materials have been developed by several groups as direct replacement of 3He gas detectors, mainly for ...homeland security applications. Results so far achieved in terms of detection efficiency are quite good (up to ≃50%) and, combined with the intrinsic excellent position resolution of silicon sensors, could lead to high performance neutron imaging systems. In this paper, we review the state of the art in three-dimensional silicon sensors for thermal-neutron detection, addressing the most promising solutions for neutron imaging. Moreover, selected results from the developments at the University of Trento on 3D pixelated detectors having relatively low fabrication complexity and expected high neutron detection efficiency up to 30% will be reported.
•A review of the main semiconductor detectors for thermal neutron imaging is reported.•Results so far achieved and pros and cons of the different approaches are discussed.•Neutron detectors developed at the University of Trento promise high performance.
The very high radiation fluences expected at the high-luminosity large hadron collider (LHC) impose new challenges in terms of design of radiation resistant silicon detectors. The choice to use ...p-type substrates to improve the charge collection efficiency involves an optimization of the strip isolation to interrupt the inversion layer between the n± implants, limiting the breakdown voltage. To this purpose, TCAD modeling and simulation schemes, already developed and validated at typical LHC fluences have to be adapted to take into account effects usually neglected at lower fluences. To better understand in a comprehensive framework, the complex and articulated phenomena related to bulk and surface radiation damage, measurements on test structures and sensors, as well as TCAD simulations related to bulk, surface and interface effects, have been carried out. In particular, we have studied the properties of the SiO 2 layer and of the Si-SiO 2 interface, using MOS capacitors and gate-controlled diodes (gated diodes) manufactured by different vendors on a high-resistivity p-type silicon before and after irradiation with X-rays in the range from 50 krad to 10 Mrad. In this paper, we present the results of the experimental characterizations as well as the simulation findings, in order to analyze the effects of the interface traps on the strip isolation. This analysis helps us to validate the model and to identify the most sensitive technological and design parameters to be optimized for the design of advanced 2-D and 3-D silicon radiation detectors.
Tracking in 4 dimensions Cartiglia, N.; Arcidiacono, R.; Baldassarri, B. ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
02/2017, Letnik:
845, Številka:
C
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In this contribution we will review the progresses toward the construction of a tracking system able to measure the passage of charged particles with a combined precision of ∼10ps and ∼10μm, either ...using a single type of sensor, able to concurrently measure position and time, or a combination of position and time sensors.
Single-photon avalanche diode (SPAD) arrays fabricated in a 180-nm CMOS technology with a high-voltage option have been exposed to calibrated neutron and X-ray sources to evaluate their radiation ...tolerance. The technology is being investigated in view of the design of low material budget detectors for charged particle tracking based on the coincidence of the signals coming from two or more overlapping layers of SPAD sensors. Each element in the array is a monolithic detector including the processing electronics together with the diode in the same substrate. Different sensor dimensions and structures have been implemented in the test chip to thoroughly explore the technology features. This paper will present and discuss the results from the characterization, in terms of dark count rate, of SPAD arrays irradiated with X-ray doses reaching 1 Mrad(SiO 2 ) and with neutron fluences up to <inline-formula> <tex-math notation="LaTeX">10^{11}~1 </tex-math></inline-formula>-MeV neutron equivalent cm<inline-formula> <tex-math notation="LaTeX">^{-2} </tex-math></inline-formula>.
Development of a new generation of 3D pixel sensors for HL-LHC Dalla Betta, G.-F.; Boscardin, M.; Darbo, G. ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
07/2016, Letnik:
824
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This paper covers the main technological and design aspects relevant to the development of a new generation of thin 3D pixel sensors with small pixel size aimed at the High-Luminosity LHC upgrades.
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