Whilst the thermal management needs of future silicon detectors are increasing, the required mass and volume minimization of all detector ancillaries gets more demanding. This requires highly ...effective active cooling in very small channels. In the context of the AIDA-2020 project, a new test stand has been developed to characterize, with unprecedented level of accuracy, boiling flows of CO2 in mini- and micro-channels with hydraulic diameter ranging from 2 down to 0.1 mm. The heat transfer coefficient and pressure drop behaviour in stainless steel tubular evaporators for saturation temperatures from ＋20 to −25 °C, mass fluxes from 1200 to 100 kg m−2 s−1 and heat fluxes from 0.5 to 3.5 W/cm2 are discussed for one diameter. In addition, high speed camera observations of CO2 flow patterns recorded on micro-structured silicon cold plates are used to help with the interpretation of the heat transfer coefficient and pressure drop trends reported.
In view of the LHC upgrade for the High Luminosity phase (HL-LHC), the ATLAS experiment plans to replace the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising ...candidate to achieve a large area instrumented with pixel sensors, since it is radiation hard and cost effective. The paper reports on the performance of thin 100 and 130μm n-in-p planar pixel sensors produced by FBK-CMM with active-edge technology in collaboration with LPNHE and INFN. Beam-test results are presented, with focus on the hit efficiency at the detector edge of a novel design consisting of a staggered deep trench.
In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a ...promising candidate to achieve a large area instrumented with pixel sensors, since it is radiation hard and cost effective. The presentation describes the performance of novel n-in-p edgeless planar pixel sensors produced by FBK-CMM, making use of the active trench for the reduction of the dead area at the periphery of the device. After discussing the sensor technology, some feedback from preliminary results of the first beam test will be discussed.
In view of the LHC upgrade for the high luminosity phase (HL-LHC), the ATLAS experiment is planning to replace the inner detector with an all-silicon system. The n-in-p bulk technology represents a ...valid solution for the modules of most of the layers, given the significant radiation hardness of this option and the reduced cost. The large area necessary to instrument the outer layers will demand to tile the sensors, a solution for which the inefficient region at the border of each sensor needs to be reduced to the minimum size. This paper reports on a joint R&D project by the ATLAS LPNHE Paris group and FBK Trento on a novel n-in-p edgeless planar pixel design, based on the deep-trench process available at FBK.
In view of the LHC upgrade phases towards HL-LHC, the ATLAS experiment plans to upgrade the inner detector with an all-silicon system. The n-on-p silicon technology is a promising candidate for the ...pixel upgrade thanks to its radiation hardness and cost effectiveness. The edgeless technology would allow for enlarging the area instrumented with pixel detectors. We report on the development of novel n-on-p edgeless planar pixel sensors fabricated at FBK (Trento, Italy), making use of the active edge concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology and fabrication process, we present device simulations (pre- and post-irradiation) performed for different sensor configurations. First preliminary results obtained with the test-structures of the production are shown.
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