Structural symmetry-breaking plays a crucial role in determining the electronic band structures of two-dimensional materials. Tremendous efforts have been devoted to breaking the in-plane symmetry of ...graphene with electric fields on AB-stacked bilayers or stacked van der Waals heterostructures. In contrast, transition metal dichalcogenide monolayers are semiconductors with intrinsic in-plane asymmetry, leading to direct electronic bandgaps, distinctive optical properties and great potential in optoelectronics. Apart from their in-plane inversion asymmetry, an additional degree of freedom allowing spin manipulation can be induced by breaking the out-of-plane mirror symmetry with external electric fields or, as theoretically proposed, with an asymmetric out-of-plane structural configuration. Here, we report a synthetic strategy to grow Janus monolayers of transition metal dichalcogenides breaking the out-of-plane structural symmetry. In particular, based on a MoS
monolayer, we fully replace the top-layer S with Se atoms. We confirm the Janus structure of MoSSe directly by means of scanning transmission electron microscopy and energy-dependent X-ray photoelectron spectroscopy, and prove the existence of vertical dipoles by second harmonic generation and piezoresponse force microscopy measurements.
The emergence of two-dimensional electronic materials has stimulated proposals of novel electronic and photonic devices based on the heterostructures of transition metal dichalcogenides. Here we ...report the determination of band offsets in the heterostructures of transition metal dichalcogenides by using microbeam X-ray photoelectron spectroscopy and scanning tunnelling microscopy/spectroscopy. We determine a type-II alignment between MoS2 and WSe2 with a valence band offset value of 0.83 eV and a conduction band offset of 0.76 eV. First-principles calculations show that in this heterostructure with dissimilar chalcogen atoms, the electronic structures of WSe2 and MoS2 are well retained in their respective layers due to a weak interlayer coupling. Moreover, a valence band offset of 0.94 eV is obtained from density functional theory, consistent with the experimental determination.
Due to its high carrier mobility, broadband absorption, and fast response time, the semi-metallic graphene is attractive for optoelectronics. Another two-dimensional semiconducting material ...molybdenum disulfide (MoS2) is also known as light- sensitive. Here we show that a large-area and continuous MoS2 monolayer is achievable using a CVD method and graphene is transferable onto MoS2. We demonstrate that a photodetector based on the graphene/MoS2 heterostructure is able to provide a high photogain greater than 10(8). Our experiments show that the electron-hole pairs are produced in the MoS2 layer after light absorption and subsequently separated across the layers. Contradictory to the expectation based on the conventional built-in electric field model for metal-semiconductor contacts, photoelectrons are injected into the graphene layer rather than trapped in MoS2 due to the presence of a perpendicular effective electric field caused by the combination of the built-in electric field, the applied electrostatic field, and charged impurities or adsorbates, resulting in a tuneable photoresponsivity.
Contact engineering has been the central issue in the context of high-performance field-effect transistors (FETs) made of atomic thin transition metal dichalcogenides (TMDs). Conventional metal ...contacts on TMDs have been made on top via a lithography process, forming a top-bonded contact scheme with an appreciable contact barrier. To provide a more efficient pathway for charge injection, an end-bonded contact scheme has been proposed, in which covalent bonds are formed between the contact metal and channel edges. Yet, little efforts have been made to realize this contact configuration. Here, we bridge this gap and demonstrate seeded growth of end-bonded contact with different TMDs by means of chemical vapor deposition (CVD). Monolayer WSe2 FETs with a CVD-grown channel and end contacts exhibit improved performance metrics, including an on-current density of 30 μA/μm, a hole mobility of 90 cm2/V·s, and a subthreshold swing of 94 mV/dec, an order of magnitude superior than those of top-contact FET counterparts that share the same channel material. A fundamental NOT logic gate constructed using top-gated and end-bonded WSe2 and MoS2 FETs is also demonstrated. Calculations using density functional theory indicate that the superior device performance stems mainly from the stronger metal–TMD hybridization and substantial gap states in the end-contact configuration.
Band structure by design in 2D layered semiconductors is highly desirable, with the goal to acquire the electronic properties of interest through the engineering of chemical composition, structure, ...defect, stacking, or doping. For atomically thin transition metal dichalcogenides, substitutional doping with more than one single type of transition metals is the task for which no feasible approach is proposed. Here, the growth of WS2 monolayer is shown codoped with multiple kinds of transition metal impurities via chemical vapor deposition controlled in a diffusion‐limited mode. Multielement embedment of Cr, Fe, Nb, and Mo into the host lattice is exemplified. Abundant impurity states thus generate in the bandgap of the resultant WS2 and provide a robust switch of charging/discharging states upon sweep of an electric filed. A profound memory window exists in the transfer curves of doped WS2 field‐effect transistors, forming the basis of binary states for robust nonvolatile memory. The doping technique presented in this work brings one step closer to the rational design of 2D semiconductors with desired electronic properties.
Multielement codoped monolayer WS2 is synthesized using chemical vapor deposition. No dopant clustering and phase segregation occur and WS2 retains n‐type semiconducting properties. Substantial and stable impurities states are introduced near the conduction band minimum. Through the charging/discharging of the impurity states, the doped WS2 functions as a nonvolatile memory with long charge‐retention time.
Semiconductor heterostructures have played a critical role as the enabler for new science and technology. The emergence of transition‐metal dichalcogenides (TMDs) as atomically thin semiconductors ...has opened new frontiers in semiconductor heterostructures either by stacking different TMDs to form vertical heterojunctions or by stitching them laterally to form lateral heterojunctions via direct growth. In conventional semiconductor heterostructures, the design of multijunctions is critical to achieve carrier confinement. Analogously, successful synthesis of a monolayer WS2/WS2(1−x)Se2x/WS2 multijunction lateral heterostructure via direct growth by chemical vapor deposition is reported. The grown structures are characterized by Raman, photoluminescence, and annular dark‐field scanning transmission electron microscopy to determine their lateral compositional profile. More importantly, using microwave impedance microscopy, it is demonstrated that the local photoconductivity in the alloy region can be tailored and enhanced by two orders of magnitude over pure WS2. Finite element analysis confirms that this effect is due to the carrier diffusion and confinement into the alloy region. This work exemplifies the technological potential of atomically thin lateral heterostructures in optoelectronic applications.
The successful synthesis of a monolayer lateral heterostructure with multijunctions WS2/WS2(1−x)Se2x/WS2 (x ≈ 0.15) by chemical vapor deposition is reported. The grown structures are characterized by Raman and photoluminescence. Using light‐assisted microwave impedance microscopy, the multijunctions demonstrate that the local photoconductivity in the alloy region can be tailored and enhanced by two orders of magnitude over pure WS2.
Elastic strain has the potential for a controlled manipulation of the band gap and spin-polarized Dirac states of topological materials, which can lead to pseudomagnetic field effects, helical flat ...bands, and topological phase transitions. However, practical realization of these exotic phenomena is challenging and yet to be achieved. Here we show that the Dirac surface states of the topological insulator Bi2Se3 can be reversibly tuned by an externally applied elastic strain. Performing in situ X-ray diffraction and in situ angle-resolved photoemission spectroscopy measurements during tensile testing of epitaxial Bi2Se3 films bonded onto a flexible substrate, we demonstrate elastic strains of up to 2.1% and quantify the resulting changes in the topological surface state. Our study establishes the functional relationship between the lattice and electronic structures of Bi2Se3 and, more generally, demonstrates a new route toward momentum-resolved mapping of strain-induced band structure changes.
Abstract
For the active T-Taur star RW Aur A we have performed long-term (∼10 yr) monitoring observations of (1) jet imaging in the Fe II 1.644
μ
m emission line using Gemini-NIFS and VLT-SINFONI; ...(2) optical high-resolution spectroscopy using CFHT-ESPaDOnS; and (3)
V
-band photometry using the CrAO 1.25-m telescope and AAVSO. The latter two observations confirm the correlation of time variabilities between (A) the Ca II 8542 Å and O I 7772 Å line profiles associated with magnetospheric accretion, and (B) optical continuum fluxes. The jet images and their proper motions show that four knot ejections occurred at the star over the past ∼15 yr with an irregular interval of 2–6 yr. The timescale and irregularity of these intervals are similar to those of the dimming events seen in the optical photometry data. Our observations show a possible link between remarkable (Δ
V
< −1) photometric rises and jet knot ejections. Observations over another few years may confirm or reject this trend. If confirmed, this would imply that the location of the jet launching region is very close to the star (
r
≲ 0.1 au) as predicted by some jet launching models. Such a conclusion would be crucial for understanding disk evolution within a few astronomical units of the star, and therefore possible ongoing planet formation at these radii.
Abstract
We present Gemini-NIFS, Very Large Telescope-SINFONI, and Keck-OSIRIS observations of near-IR Fe
ii
emission that are associated with well-studied jets from three active T Tauri stars—RW ...Aur A, RY Tau, and DG Tau—taken from 2012 to 2021. We primarily cover the redshifted jet from RW Aur A and the blueshifted jets from RY Tau and DG Tau, in order to investigate long-term time variabilities that are potentially related to the activities of mass accretion and/or the stellar magnetic fields. All of these jets consist of several moving knots, with tangential velocities of 70–240 km s
−1
, which were ejected from the star with different velocities and at irregular time intervals. Via comparisons with the literature, we identify significant differences in the tangential velocities between 1985–2008 and 2008–2021 for the DG Tau jet. The sizes of the individual knots appear to increase with time, and, in turn, their peak brightnesses in the 1.644
μ
m emission decreased by up to a factor of ∼30 during the epochs of our observations. The variety of decay timescales measured in the Fe
ii
1.644
μ
m emission could be attributed to different preshock conditions should the moving knots be unresolved shocks. However, our data do not exclude the possibility that these knots are due to nonuniform density/temperature distributions with another heating mechanism, or, in some cases, due to stationary shocks without proper motions. Spatially resolved observations of these knots with significantly higher angular resolutions will be necessary to better understand their physical nature.
To date, almost all of the discussions on topological insulators (TIs) have focused on two- and three-dimensional systems. One-dimensional (1D) TIs manifested in real materials, in which localized ...spin states may exist at the end or near the junctions, have largely been unexplored. Previous studies have considered the system of gapped graphene nanoribbons (GNRs) possessing spatial symmetries (e.g., inversion) with only termination patterns commensurate with inversion- or mirror-symmetric unit cells. In this work, we prove that a symmetry-protected Z 2 topological classification exists for any type of termination. In these cases the Berry phase summed up over all occupied bands turns out to be π-quantized in the presence of the chiral symmetry. However, it does not always provide the correct corresponding Z 2 as one would have expected. We show that only the origin-independent part of the Berry phase gives the correct bulk-boundary correspondence by its π-quantized values. The resulting Z 2 invariant depends on the choice of the 1D unit cell (defined by the nanoribbon termination) and is shown to be connected to the symmetry eigenvalues of the wave functions at the center and boundary of the Brillouin zone. Using the cove-edged GNRs as examples, we demonstrate the existence of localized states at the end of some GNR segments and at the junction between two GNRs based on a topological analysis. The current results are expected to shed light on the design of electronic devices based on GNRs as well as the understanding of the topological features in 1D systems.
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