TeO2 bolometers have been used for many years to search for neutrinoless double beta decay in 130-Te. CUORE, a tonne-scale TeO2 detector array, recently published the most sensitive limit on the ...half-life, \(T_{1/2}^{0\nu} > 1.5 \times 10^{25}\,\)yr, which corresponds to an upper bound of \(140-400\)~meV on the effective Majorana mass of the neutrino. While it makes CUORE a world-leading experiment looking for neutrinoless double beta decay, it is not the only study that CUORE will contribute to in the field of nuclear and particle physics. As already done over the years with many small-scale experiments, CUORE will investigate both rare decays (such as the two-neutrino double beta decay of 130-Te and the hypothesized electron capture in 123-Te), and rare processes (e.g., dark matter and axion interactions). This paper describes some of the achievements of past experiments that used TeO2 bolometers, and perspectives for CUORE.
The effect of the central cell correction on the binding energies of shallow donors in a spherical GaAs/Ga/sub 1-x/Al/sub x/As quantum dot is studied. The effective-mass approximation within a ...variational scheme is adopted and central cell corrections are calculated by using a Coulomb potential modified with an adjustable parameter. For small values of the radius of the dot large corrections are obtained for the shallow donors studied.
A photoconduction study on porous silicon Dafinei, A.; Craciun, G.; Flueraru, C. ...
1997 International Semiconductor Conference 20th Edition. CAS '97 Proceedings,
1997, Letnik:
1
Conference Proceeding
The porosification of crystalline silicon by electrochemical methods led to the obtaining of a new material with substantial changes in photoelectronic properties. The photoconductive behaviour of ...porous silicon is characterised by an extremely high dark resistivity, a photosensitivity for visible light, and an intrinsic bias voltage dependence of the spectral response. These properties are interpreted as a result of band-gap widening in PS and are correlated with surface morphology investigated by Atomic Force Microscopy (AFM).
Porous silicon layers, with different morphologies, obtained by anodic etching were investigated by scanning electron microscopy (SEM). The paper includes a statistical analysis of pores size using a ...line-method on SEM micrographs and a discussion about the influence of anodization parameters on depth, porosity and etch rates of porous silicon layers.
Porous silicon obtained in different electrochemical conditions was investigated by optical and Scanning Electron Microscopy (SEM). This paper includes an analysis of the SEM micrographs with ...evaluation of the pores' size, thickness and the etch rate of the porous silicon layer.
IR and UV-VIS spectrometry were used to study the correlation between the anodization conditions and the structure of the porous silicon (PS). The specific surface area increase with the electric ...charge involved in the etching process. At the same time the total amount of SiH bonds in the PS layer depends on the value of the effective surface. The total electric charge passed through the sample has been related with integral IR absorbances of the Si-H and Si-H/sub 2/ bands. An approximately linear function was obtained, especially for SiH. The reactivity of the PS layer related with the anodization conditions have been studied using the behaviour of the Si-O-Si bands after the oxidation in air. The UV-VIS reflection spectrometry shows an interference patterns obtained in the case of a shallow porosity.
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