In view of the LHC upgrade for the High Luminosity phase (HL-LHC), the ATLAS experiment plans to replace the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising ...candidate to achieve a large area instrumented with pixel sensors, since it is radiation hard and cost effective. The paper reports on the performance of thin 100 and 130μm n-in-p planar pixel sensors produced by FBK-CMM with active-edge technology in collaboration with LPNHE and INFN. Beam-test results are presented, with focus on the hit efficiency at the detector edge of a novel design consisting of a staggered deep trench.
Test beam results of 3D silicon pixel sensors for the ATLAS upgrade Grenier, P.; Alimonti, G.; Barbero, M. ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
05/2011, Letnik:
638, Številka:
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Results on beam tests of 3D silicon pixel sensors aimed at the ATLAS Insertable B-Layer and High Luminosity LHC (HL-LHC) upgrades are presented. Measurements include charge collection, tracking ...efficiency and charge sharing between pixel cells, as a function of track incident angle, and were performed with and without a 1.6
T magnetic field oriented as the ATLAS inner detector solenoid field. Sensors were bump-bonded to the front-end chip currently used in the ATLAS pixel detector. Full 3D sensors, with electrodes penetrating through the entire wafer thickness and active edge, and double-sided 3D sensors with partially overlapping bias and read-out electrodes were tested and showed comparable performance.
In this paper we discuss results relevant to 3D Double-Side Double Type Column (3D-DDTC) pixel sensors fabricated at FBK (Trento, Italy) and oriented to the ATLAS upgrade. Some assemblies of these ...sensors featuring different columnar electrode configurations (2, 3, or 4 columns per pixel) and coupled to the ATLAS FEI3 read-out chip were irradiated up to large proton fluences and tested in laboratory with radioactive sources. In spite of the non-optimized columnar electrode overlap, sensors exhibit reasonably good charge collection properties up to an irradiation fluence of 2×1015neqcm−2, while requiring bias voltages in the order of 100V. Sensor operation is further investigated by means of TCAD simulations which can effectively explain the basic mechanisms responsible for charge loss after irradiation.
3D-FBK pixel sensors: Recent beam tests results with irradiated devices Micelli, A.; Helle, K.; Sandaker, H. ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
09/2011, Letnik:
650, Številka:
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The Pixel Detector is the innermost part of the ATLAS experiment tracking device at the Large Hadron Collider, and plays a key role in the reconstruction of the primary vertices from the collisions ...and secondary vertices produced by short-lived particles. To cope with the high level of radiation produced during the collider operation, it is planned to add to the present three layers of silicon pixel sensors which constitute the Pixel Detector, an additional layer (Insertable B-Layer, or IBL) of sensors. 3D silicon sensors are one of the technologies which are under study for the IBL. 3D silicon technology is an innovative combination of very-large-scale integration and Micro-Electro-Mechanical-Systems where electrodes are fabricated inside the silicon bulk instead of being implanted on the wafer surfaces. 3D sensors, with electrodes fully or partially penetrating the silicon substrate, are currently fabricated at different processing facilities in Europe and USA. This paper reports on the 2010 June beam test results for irradiated 3D devices produced at FBK (Trento, Italy). The performance of these devices, all bump-bonded with the ATLAS pixel FE-I3 read-out chip, is compared to that observed before irradiation in a previous beam test.
A new ATLAS pixel front-end IC for upgraded LHC luminosity Barbero, M.; Arutinov, D.; Beccherle, R. ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
06/2009, Letnik:
604, Številka:
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A new pixel Front-End (FE) IC is being developed in a 130
nm technology for use in the upgraded ATLAS pixel detector. The new pixel FE will be made of smaller pixels (50×250
μm vs. 50×400
μm for the ...present FE, FE-I3), a much improved active area over inactive area ratio, and a new analog pixel chain tuned for low power and new detector input capacitance. The higher luminosity for which this IC is tuned implies a complete redefinition of the digital architecture logic, which will not be based on End-of-Column data buffering but on local pixel logic and local pixel data storage. An overview of the new FE is given with particular emphasis on the new digital logic architecture and possible architecture variations.
3D silicon pixel sensors: Recent test beam results Hansson, P.; Balbuena, J.; Barrera, C. ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
02/2011, Letnik:
628, Številka:
1
Journal Article
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The 3D silicon sensors aimed for the ATLAS pixel detector upgrade have been tested with a high energy pion beam at the CERN SPS in 2009. Two types of sensor layouts were tested: full-3D assemblies ...fabricated in Stanford, where the electrodes penetrate the entire silicon wafer thickness, and modified-3D assemblies fabricated at FBK-irst with partially overlapping electrodes. In both cases three read-out electrodes are ganged together to form pixels of dimension
50
×
400
μ
m
2
. Data on the pulse height distribution, tracking efficiency and resolution were collected for various particle incident angles, with and without a 1.6
T magnetic field. Data from a planar sensor of the type presently used in the ATLAS detector were used at the same time to give comparison.
Development of a new generation of 3D pixel sensors for HL-LHC Dalla Betta, G.-F.; Boscardin, M.; Darbo, G. ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
07/2016, Letnik:
824
Journal Article
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This paper covers the main technological and design aspects relevant to the development of a new generation of thin 3D pixel sensors with small pixel size aimed at the High-Luminosity LHC upgrades.
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