Electron scattering and neutrino physics Ankowski, A M; Ashkenazi, A; Bacca, S ...
Journal of physics. G, Nuclear and particle physics,
12/2023, Letnik:
50, Številka:
12
Journal Article
High-speed operational amplifiers are widely used in quantum-optical systems and equipment for recording fast pulses. The high level of parameters of such products is ensured by the use of modern ...technological routes for manufacturing microcircuits containing complementary bipolar transistors with a high cutoff frequency and a low parasitic collector capacitance. These technological routes for the manufacture of microcircuits are not available in Russia and Belarus. In order to meet the existing needs of the domestic market for radio-electronic equipment, two operational amplifiers on an MN2KhA031 master slice array (MSA) with unified stages and the possibility of changing the parameters by selecting the resistance of the current-conducting resistors and the capacity of the balancing capacitor are presented. The circuit diagrams are described and the results of the circuit modeling of two products are presented: a high-speed operational amplifier OAmp9 with a gain bandwidth product of more than 600 MHz, an output voltage rise rate of over 400 V/μs with the static parameters corresponding to general-purpose operational amplifier applications, and a precision low-noise OAmp10 amplifier with a gain of about 2 × 10
6
, an offset voltage of less than 50 μV, and a spectral noise floor relative to the input of about 1 nV/Hz
0.5
. The directions for further modernization of the developed amplifiers are formulated, especially, the reduction of the parasitic collector capacitance of transistors by design engineering, applying a reverse bias voltage, and the application of nonlinear correction circuits, which allow bringing the amplifiers’ performance in the large-signal mode closer to their performance in the low-signal mode.
—
An MH2XA031 master slice array (basic matrix crystal (BMC)) is applied for designing and semicustom production of analog integrated circuits (ICs) operating in extreme conditions. It can be ...effectively used only with a clear understanding of the permissible ranges of changes in the parameters of analog components when exposed to various types of penetrating radiation. In this study, with the help of circuit simulation, the effect of neutron fluence up to 10
14
neutrons/cm
2
and the absorbed dose of gamma rays up to 3 Mrad on the static parameters of the components of the MH2XA031 circuit design library—an ADComp3 comparator, an OAmp2 low zero offset voltage operational amplifier, an OAmp8 multidifferential operational amplifier, and a charge-sensitive amplifier (CSA) with an input double-gate transistor—is studied. It is established that the ADComp3 comparator, the OAmp2 and OAmp8 amplifiers, and the CSA remain operational at an absorbed dose of gamma rays equal to 3 Mrad. The permissible neutron fluence values for ADComp3, OAmp8, and CSA are 10
14
neutrons/cm
2
; and for OAmp2, 10
13
neutrons/cm
2
. It is established that modeling the radiation changes in the parameters of the components at higher neutron fluences (more than 10
14
neutrons/cm
2
) and the absorbed gamma quanta of more than 3 Mrad is advisable after experimental verification of the adequacy of the transistor models used at the specified levels of penetrating radiation.
The technique of circuit noise reduction of charge-sensitive amplifiers containing bipolar and junction field-effect transistors is considered. The initial and improved circuit of the integrated ...charge-sensitive amplifiers using the above mentioned technique, the results of the step-by-step noise reduction when changing the sizes and operating modes of transistors, and improvement of the bias circuits are presented.
A double gate JFETs are often used in analog integrated circuits to provide an extremely low input current and capacitance when the top gate is controlled. Circuit synthesis and modeling of analog IC ...with such a field-effect transistor are possible only if there are models that adequately describe the features of its operation, namely, changing of the current-voltage characteristics by the top gate controlling when a constant reverse voltage is applied to the bottom gate. The article considers the modernization of the well-known electrical model of the double gate field-effect transistor for the LTSpice software, which includes taking into account the influence of the top gate voltage by connecting two series-connected functional voltage sources to the top gate, one of which ensures the coincidence of the measurement results and the simulation of the drain current at a low voltage between the top gate and the source, and the second – when the voltage between the top gate and the source is close to the cutoff voltage. A method for identifying the parameters of functional voltage sources is presented. The proposed model of a double gate field-effect transistor is advisable to use in the IC design of various analog devices, especially electrometric operational amplifiers and charge-sensitive amplifiers.
The design of a new configurable structured array (CSA) is considered. The CSA is intended for development of multichannel (up to eight channels) integrated circuits of the analog interfaces of ...sensors. An example of operational amplifier is used to show that circuit synthesis with allowance for radiation-induced variations in characteristics of complementary bipolar transistors may provide minor degradation of parameters of the analog ICs after ionizing irradiation. Electrical schemes of the CSA analog components and experimentally measured parameters are presented.
For the production of integrated analog circuits with a small-scale integration, which are developed to operate at temperatures up to minus 200 ℃ and/or with absorbed dose of gamma radiation up to 5 ...Mrad, a gallium arsenide master slice has been created. The following types of active elements are used in this master slice: DpHEMT with gate dimensions 100 ηm/0,2 ηm and 10 ηm/0,2 ηm;
p-n-p
HBT, they were chosen for realization of most common analog circuits of operational amplifiers, comparators, voltage followers. Despite the small number of available DpHEMT with high transconductance for circuit synthesis and volt-ampere characteristics features of DpHEMT experimental samples, which exclude use of those transistors at low drain current, master slice give opportunity for developing charge-sensitive amplifiers (CSA) circuits with only one type of active elements – DpHEMT. At the same time, correct choice of the operating point of transistors provide development of low-noise, high-speed CSAs with better parameters than silicon CSAs for sensors with internal capacitance up to 100 pF. So, developed on GaAs master slice CSA with head DpHEMTs and ratio of the gate width to its length, equal to W/L = 2000 and W/L = 3000, characterized by current consumption I
CC
= 5,46 mA and I
CC
= 5,25 mA, rise time t
R
= 10,7 ns and t
R
= 9,6 ns, equivalent noise charge ENC = 3960 el, and ENC = 3700 el. with sensor capacitance of 50 pF, while the CSA with a head silicon
p
-channel junction field-effect transistor has W/L = 3870, I
CC
= 6,99 mA, t
R
= 27,7 ns, ENC = 5360 el. with the same sensor capacitance.
One of directions of improving parameters of analog integrated circuits is a development of new and modernization of existing designs of integrated elements without significantly changing of a ...technological route of integrated circuit manufacturing with a simultaneous creation of new integrated elements models. The article considers the results of experimental studies of the double gate junction field-effect transistor manufactured according to the 3CBiT technological route of JSC Integral. Based on the obtained results, the electrical model of double gate junction field-effect transistor is proposed, which describes the features of its application in analog integrated circuits. Comparison of I-V characteristics of measurements results and created model simulation are presented. A small capacity and a reverse current of a double gate junction field-effect transistor top gate, an ability to compensate for the DC (direct current) component of an input current provide a significant improvement in the characteristics of analog integrated circuits such as electrometric operational amplifiers and charge-sensitive amplifiers. The developed double gate junction field-effect transistor can be used in signal readout devices required in the analog interfaces of space instrument sensors and nuclear electronics.
Low temperature multi-differential operational amplifier Dvornikov, O. V.; Tchekhovski, V. A.; Dziatlau, V. L. ...
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki,
08/2021, Letnik:
19, Številka:
5
Journal Article
Recenzirano
Odprti dostop
A multi-differential operational amplifier, called OAmp3, designed for operation at temperatures up to minus 197 °С and developed on bipolar transistors and junction field-effect transistors of the ...master slice array МН2ХА030, is considered in the article. The circuitry features of the OAmp3 allow, due to the use of various negative feedback circuits, to implement a set of functions necessary for signal processing on a single amplifier: amplification (or current – voltage conversion), filtering, shift of the constant output voltage level. The performed measurements of OAmp3, connected as instrumentation amplifier circuit, showed that all manufactured products retain their performance in the temperature range from minus 150 °С to 20 °С, and individual samples – at minus 197 °С. It was found that the main reason for the loss of OAmp3 performance is an increase of the resistance of semiconductor resistors by almost 5.4 times at minus 197 °С compared to normal conditions and decrease in the junction field-effect transistor drain current. Together, these factors lead to decrease in the current consumption of the OAmp3 by almost 31 times at minus 180 °С compared to normal conditions. To reduce the temperature dependence of the current consumption and, thus, save the OAmp3 operability at low temperatures without changing the technological route of integrated circuits manufacturing, it is proposed to replace high-resistance semiconductor resistors with “pinch-resistors” formed on a small-signal p-junction field-effect transistor. The article presents the OAmp3 connection circuit in the form of an instrumental amplifier, the method and results of low-temperature measurements of experimental samples.
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