We fabricated fused-silica substrates which emit blue light by using Si-ion implantation and high-temperature annealing. Photoluminescence peak wavelengths are around 400
nm, and the peak intensities ...can be remarkable after annealing above 1150
°C.
A new configuration of an optical isolator chip, which is suitable for use in integrated in-line optical isolators, has been proposed. The chip consists of a birefringent plate, a pair of ...birefringent wedges, and a Faraday rotator. The configuration makes the best use of transmission characteristics of expanded-core fibers in which the chip is embedded. The measured insertion loss and isolation of an assembled isolator at the wavelength 1.55 /spl mu/m are 0.8- and 33-dB, respectively.
A thermally-diffused expanded core (TEC) fiber with the mode field diameter (MFD) of 40 μm has been fabricated by improving the diffusion process using an electric furnace. The outer diameter of any ...TEC fiber is preserved and the excess loss (normal-TEC-normal) is as low as 0.1 dB.
This paper proposes a simple structure (antenna coupled Y - junction) which reduces radiation losses of Y -junctions in 3-D optical waveguides by decreasing refractive indexes near the branching ...regions. A principle to reduce radiation losses and a design theory are presented for the new Y -junction by using geometrical optics. It is theoretically shown that losses of the properly designed 3-D Y -junctions can be reduced by around an order of magnitude compared to those of conventional ones when the branching angles are large.
We developed a dry-etching process to form holes with diameters of 5–50 μm in 7-μm thick a-Si/SiO
2 three-dimensional (3D) photonic crystal layers fabricated on InP substrates by the autocloning ...method. We also demonstrated wet-etching processes to remove damaged surfaces of exposed InP substrates and selectively grew In
0.62Ga
0.38As/In
0.45Ga
0.31Al
0.24As multiple quantum well by molecular beam epitaxy in a region surrounded by a-Si/SiO
2 3D photonic crystals. Polarization dependence was observed in a spontaneous emission transmitted at 75 μm in a lateral direction in the photonic crystal layer.
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