Discovery of the Earth's Van Allen radiation belts by instruments flown on Explorer 1 in 1958 was the first major discovery of the Space Age. The observation of distinct inner and outer zones of ...trapped megaelectron volt (MeV) particles, primarily protons at low altitude and electrons at high altitude, led to early models for source and loss mechanisms including Cosmic Ray Albedo Neutron Decay for inner zone protons, radial diffusion for outer zone electrons and loss to the atmosphere due to pitch angle scattering. This scattering lowers the mirror altitude for particles in their bounce motion parallel to the Earth's magnetic field until they suffer collisional loss. A view of the belts as quasi‐static inner and outer zones of energetic particles with different sources was modified by observations made during the Solar Cycle 22 maximum in solar activity over 1989–1991. The dynamic variability of outer zone electrons was measured by the Combined Radiation Release and Effects Satellite launched in July 1990. This variability is caused by distinct types of heliospheric structure that vary with the solar cycle. The launch of the twin Van Allen Probes in August 2012 has provided much longer and more comprehensive measurements during the declining phase of Solar Cycle 24. Roughly half of moderate geomagnetic storms, determined by intensity of the ring current carried mostly by protons at hundreds of kiloelectron volts, produce an increase in trapped relativistic electron flux in the outer zone. Mechanisms for accelerating electrons of hundreds of electron volts stored in the tail region of the magnetosphere to MeVenergies in the trapping region are described in this review: prompt and diffusive radial transport and local acceleration driven by magnetospheric waves. Such waves also produce pitch angle scattering loss, as does outward radial transport, enhanced when the magnetosphere is compressed. While quasilinear simulations have been used to successfully reproduce many essential features of the radiation belt particle dynamics, nonlinear wave‐particle interactions are found to be potentially important for causing more rapid particle acceleration or precipitation. The findings on the fundamental physics of the Van Allen radiation belts potentially provide insights into understanding energetic particle dynamics at other magnetized planets in the solar system, exoplanets throughout the universe, and in astrophysical and laboratory plasmas. Computational radiation belt models have improved dramatically, particularly in the Van Allen Probes era, and assimilative forecasting of the state of the radiation belts has become more feasible. Moreover, machine learning techniques have been developed to specify and predict the state of the Van Allen radiation belts. Given the potential Space Weather impact of radiation belt variability on technological systems, these new radiation belt models are expected to play a critical role in our technological society in the future as much as meteorological models do today.
Plain Language Summary
Discovery of the Earth's Van Allen radiation belts by instruments flown on Explorer 1 in 1958 was the first major discovery of the Space Age. The dynamic properties of trapped outer zone electrons and the outer boundary of the inner zone proton population, along with source populations, have recently been studied in great detail by instruments on National Aeronautics and Space Administration's Van Allen Probes spacecraft, as well as other data sources like operational spacecraft designed for navigation and terrestrial weather forecasting. The vulnerability of the myriad of spacecraft that is strongly affected by space weather disruptions, as compared to 1958, has motivated the radiation belt community to develop essential improved models for forecasting the space environment we will inhabit in the 21st century and evaluate its impacts on our technological society. In this paper, we provide a review on historical background and recent advances in understanding and modeling acceleration, transport, and loss processes of energetic particles in the Earth's Van Allen radiation belts, followed by outstanding challenges for developing future radiation belt models. The findings on the fundamental physics of the Van Allen radiation belts potentially provide insights into understanding energetic particle dynamics at other magnetized planets in the solar system, exoplanets throughout the universe, as well as in astrophysical and laboratory plasmas. Given the potential Space Weather impact of radiation belt variability on technological systems, these new radiation belt models are expected to play a critical role in our technological society in the future much as meteorological models do today.
Key Points
A brief historical background on the discovery of the Van Allen radiation belts and their response to solar activity is introduced
Recent advances in understanding mechanisms responsible for radiation belt electron acceleration, transport, and loss are reviewed
Outstanding challenges for developing future radiation belt models are summarized
Quantum computers are expected to outperform conventional computers in several important applications, from molecular simulation to search algorithms, once they can be scaled up to large ...numbers-typically millions-of quantum bits (qubits)
. For most solid-state qubit technologies-for example, those using superconducting circuits or semiconductor spins-scaling poses a considerable challenge because every additional qubit increases the heat generated, whereas the cooling power of dilution refrigerators is severely limited at their operating temperature (less than 100 millikelvin)
. Here we demonstrate the operation of a scalable silicon quantum processor unit cell comprising two qubits confined to quantum dots at about 1.5 kelvin. We achieve this by isolating the quantum dots from the electron reservoir, and then initializing and reading the qubits solely via tunnelling of electrons between the two quantum dots
. We coherently control the qubits using electrically driven spin resonance
in isotopically enriched silicon
Si, attaining single-qubit gate fidelities of 98.6 per cent and a coherence time of 2 microseconds during 'hot' operation, comparable to those of spin qubits in natural silicon at millikelvin temperatures
. Furthermore, we show that the unit cell can be operated at magnetic fields as low as 0.1 tesla, corresponding to a qubit control frequency of 3.5 gigahertz, where the qubit energy is well below the thermal energy. The unit cell constitutes the core building block of a full-scale silicon quantum computer and satisfies layout constraints required by error-correction architectures
. Our work indicates that a spin-based quantum computer could be operated at increased temperatures in a simple pumped
He system (which provides cooling power orders of magnitude higher than that of dilution refrigerators), thus potentially enabling the integration of classical control electronics with the qubit array
.
Once the periodic properties of elements were unveiled, chemical behaviour could be understood in terms of the valence of atoms. Ideally, this rationale would extend to quantum dots, and quantum ...computation could be performed by merely controlling the outer-shell electrons of dot-based qubits. Imperfections in semiconductor materials disrupt this analogy, so real devices seldom display a systematic many-electron arrangement. We demonstrate here an electrostatically confined quantum dot that reveals a well defined shell structure. We observe four shells (31 electrons) with multiplicities given by spin and valley degrees of freedom. Various fillings containing a single valence electron-namely 1, 5, 13 and 25 electrons-are found to be potential qubits. An integrated micromagnet allows us to perform electrically-driven spin resonance (EDSR), leading to faster Rabi rotations and higher fidelity single qubit gates at higher shell states. We investigate the impact of orbital excitations on single qubits as a function of the dot deformation and exploit it for faster qubit control.
Abstract
A fault-tolerant quantum processor may be configured using stationary qubits interacting only with their nearest neighbours, but at the cost of significant overheads in physical qubits per ...logical qubit. Such overheads could be reduced by coherently transporting qubits across the chip, allowing connectivity beyond immediate neighbours. Here we demonstrate high-fidelity coherent transport of an electron spin qubit between quantum dots in isotopically-enriched silicon. We observe qubit precession in the inter-site tunnelling regime and assess the impact of qubit transport using Ramsey interferometry and quantum state tomography techniques. We report a polarization transfer fidelity of 99.97% and an average coherent transfer fidelity of 99.4%. Our results provide key elements for high-fidelity, on-chip quantum information distribution, as long envisaged, reinforcing the scaling prospects of silicon-based spin qubits.
Silicon quantum dot spin qubits provide a promising platform for large-scale quantum computation because of their compatibility with conventional CMOS manufacturing and the long coherence times ...accessible using
Si enriched material. A scalable error-corrected quantum processor, however, will require control of many qubits in parallel, while performing error detection across the constituent qubits. Spin resonance techniques are a convenient path to parallel two-axis control, while Pauli spin blockade can be used to realize local parity measurements for error detection. Despite this, silicon qubit implementations have so far focused on either single-spin resonance control, or control and measurement via voltage-pulse detuning in the two-spin singlet-triplet basis, but not both simultaneously. Here, we demonstrate an integrated device platform incorporating a silicon metal-oxide-semiconductor double quantum dot that is capable of single-spin addressing and control via electron spin resonance, combined with high-fidelity spin readout in the singlet-triplet basis.
Universal quantum computation will require qubit technology based on a scalable platform
, together with quantum error correction protocols that place strict limits on the maximum infidelities for ...one- and two-qubit gate operations
. Although various qubit systems have shown high fidelities at the one-qubit level
, the only solid-state qubits manufactured using standard lithographic techniques that have demonstrated two-qubit fidelities near the fault-tolerance threshold
have been in superconductor systems. Silicon-based quantum dot qubits are also amenable to large-scale fabrication and can achieve high single-qubit gate fidelities (exceeding 99.9 per cent) using isotopically enriched silicon
. Two-qubit gates have now been demonstrated in a number of systems
, but as yet an accurate assessment of their fidelities using Clifford-based randomized benchmarking, which uses sequences of randomly chosen gates to measure the error, has not been achieved. Here, for qubits encoded on the electron spin states of gate-defined quantum dots, we demonstrate Bell state tomography with fidelities ranging from 80 to 89 per cent, and two-qubit randomized benchmarking with an average Clifford gate fidelity of 94.7 per cent and an average controlled-rotation fidelity of 98 per cent. These fidelities are found to be limited by the relatively long gate times used here compared with the decoherence times of the qubits. Silicon qubit designs employing fast gate operations with high Rabi frequencies
, together with advanced pulsing techniques
, should therefore enable much higher fidelities in the near future.
A two-qubit logic gate in silicon Veldhorst, M; Yang, C H; Hwang, J C C ...
Nature (London),
10/2015, Letnik:
526, Številka:
7573
Journal Article
Recenzirano
Odprti dostop
Quantum computation requires qubits that can be coupled in a scalable manner, together with universal and high-fidelity one- and two-qubit logic gates. Many physical realizations of qubits exist, ...including single photons, trapped ions, superconducting circuits, single defects or atoms in diamond and silicon, and semiconductor quantum dots, with single-qubit fidelities that exceed the stringent thresholds required for fault-tolerant quantum computing. Despite this, high-fidelity two-qubit gates in the solid state that can be manufactured using standard lithographic techniques have so far been limited to superconducting qubits, owing to the difficulties of coupling qubits and dephasing in semiconductor systems. Here we present a two-qubit logic gate, which uses single spins in isotopically enriched silicon and is realized by performing single- and two-qubit operations in a quantum dot system using the exchange interaction, as envisaged in the Loss-DiVincenzo proposal. We realize CNOT gates via controlled-phase operations combined with single-qubit operations. Direct gate-voltage control provides single-qubit addressability, together with a switchable exchange interaction that is used in the two-qubit controlled-phase gate. By independently reading out both qubits, we measure clear anticorrelations in the two-spin probabilities of the CNOT gate.
Single-electron spin qubits employ magnetic fields on the order of 1 Tesla or above to enable quantum state readout via spin-dependent-tunnelling. This requires demanding microwave engineering for ...coherent spin resonance control, which limits the prospects for large scale multi-qubit systems. Alternatively, singlet-triplet readout enables high-fidelity spin-state measurements in much lower magnetic fields, without the need for reservoirs. Here, we demonstrate low-field operation of metal-oxide-silicon quantum dot qubits by combining coherent single-spin control with high-fidelity, single-shot, Pauli-spin-blockade-based ST readout. We discover that the qubits decohere faster at low magnetic fields with Formula: see text μs and Formula: see text μs at 150 mT. Their coherence is limited by spin flips of residual
Si nuclei in the isotopically enriched
Si host material, which occur more frequently at lower fields. Our finding indicates that new trade-offs will be required to ensure the frequency stabilization of spin qubits, and highlights the importance of isotopic enrichment of device substrates for the realization of a scalable silicon-based quantum processor.
Electromagnetic ion cyclotron (EMIC) waves have long been considered to be a significant loss mechanism for relativistic electrons. This has most often been attributed to resonant interactions with ...the highest amplitude waves. But recent observations have suggested that the dominant energy of electrons precipitated to the atmosphere may often be relatively low, less than 1 MeV, whereas the minimum resonant energy of the highest amplitude waves is often greater than 2 MeV. Here we use relativistic electron test particle simulations in the wavefields of a hybrid code simulation of EMIC waves in dipole geometry in order to show that significant pitch angle scattering can occur due to interaction with low‐amplitude short‐wavelength EMIC waves. In the case we examined, these waves are in the H band (at frequencies above the He+ gyrofrequency), even though the highest amplitude waves were in the He band frequency range (below the He+ gyrofrequency). We also present wave power distributions for 29 EMIC simulations in straight magnetic field line geometry that show that the high wave number portion of the spectrum is in every case mostly due to the H band waves. Though He band waves are often associated with relativistic electron precipitation, it is possible that the He band waves do not directly scatter the sub‐megaelectron volts (sub‐MeV) electrons, but that the presence of He band waves is associated with high plasma density which lowers the minimum resonant energy so that these electrons can more easily resonate with the H band waves.
Key Points
Electromagnetic ion cyclotron (EMIC) waves can pitch angle scatter sub‐MeV relativistic electrons and precipitate them into the atmosphere
This occurs through interaction with short‐wavelength waves, which may have smaller amplitude than the dominant waves
H band EMIC waves, with frequency above the He+ gyrofrequency, likely cause the scattering even if the dominant waves are in the He band
Exciting progress towards spin-based quantum computing has recently been made with qubits realized using nitrogen-vacancy centres in diamond and phosphorus atoms in silicon. For example, long ...coherence times were made possible by the presence of spin-free isotopes of carbon and silicon. However, despite promising single-atom nanotechnologies, there remain substantial challenges in coupling such qubits and addressing them individually. Conversely, lithographically defined quantum dots have an exchange coupling that can be precisely engineered, but strong coupling to noise has severely limited their dephasing times and control fidelities. Here, we combine the best aspects of both spin qubit schemes and demonstrate a gate-addressable quantum dot qubit in isotopically engineered silicon with a control fidelity of 99.6%, obtained via Clifford-based randomized benchmarking and consistent with that required for fault-tolerant quantum computing. This qubit has dephasing time T2* = 120 μs and coherence time T2 = 28 ms, both orders of magnitude larger than in other types of semiconductor qubit. By gate-voltage-tuning the electron g*-factor we can Stark shift the electron spin resonance frequency by more than 3,000 times the 2.4 kHz electron spin resonance linewidth, providing a direct route to large-scale arrays of addressable high-fidelity qubits that are compatible with existing manufacturing technologies.
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