With superior optical properties, high flexibility in engineering its material properties, and strong capability for large-scale on-chip integration, graphene oxide (GO) is an attractive solution for ...on-chip integration of two-dimensional (2D) materials to implement functional integrated photonic devices capable of new features. Over the past decade, integrated GO photonics, representing an innovative merging of integrated photonic devices and thin GO films, has experienced significant development, leading to a surge in many applications covering almost every field of optical sciences. This paper reviews the recent advances in this emerging field, providing an overview of the optical properties of GO as well as methods for the on-chip integration of GO. The main achievements made in GO hybrid integrated photonic devices for diverse applications are summarized. The open challenges as well as the potential for future improvement are also discussed.
In article number 1906563, Baohua Jia, David J. Moss, and co‐workers demonstrate significantly enhanced nonlinear four‐wave mixing (FWM) in complementary‐metal‐oxide‐semiconductor compatible ...micro‐ring resonators integrated with 2D layered graphene oxide (GO) films. The dependence of GO's third‐order nonlinearity on layer number and light power is also revealed based on the FWM results.
We report a large third order nonlinear optical response of palladium diselenide (PdSe2) films, a two dimensional (2D) noble metal dichalcogenide material. Both open aperture (OA) and closed aperture ...(CA) Z scan measurements are performed with a femtosecond pulsed laser at 800 nm to investigate the nonlinear absorption and nonlinear refraction, respectively. In the OA experiment, we observe optical limiting behaviour originating from large two photo absorption (TPA) in the PdSe2 film of beta = 3.26 x 10-8 m/W. In the CA experiment, we measure a peak-valley response corresponding to a large and negative Kerr nonlinearity of n2 = -1.33 x 10-15 m2/W, two orders of magnitude larger than bulk silicon. We also characterize the variation of n2 as a function of laser intensity, observing that n2 decreases in magnitude with incident laser intensity, becoming saturated at n2 = -9.96 x 10-16 m2/W at high intensities. These results verify the large third order nonlinear optical response of 2D PdSe2 as well as its strong potential for high performance nonlinear photonic devices.
We theoretically investigate and optimize four-wave mixing (FWM) in silicon nitride (SiN) waveguides integrated with two-dimensional (2D) layered graphene oxide (GO) films. Based on extensive ...previous measurements of the material parameters of the GO films, we perform detailed analysis for the influence of device parameters including waveguide geometry, GO film thickness, length, and coating position on the FWM conversion efficiency (CE) and conversion bandwidth (CB). The influence of dispersion and photo-thermal changes in the GO films is also discussed. Owing to the strong mode overlap between the SiN waveguides and the highly nonlinear GO films, FWM in the hybrid waveguides can be significantly enhanced. We obtain good agreement with previous experimental results and show that by optimizing the device parameters to balance the trade-off between Kerr nonlinearity and loss, the FWM CE can be improved by as much as ~20.7 dB and the FWM CB can be increased by ~4.4 folds, relative to the uncoated waveguides. These results highlight the significantly enhanced FWM performance that can be achieved in SiN waveguides by integrating 2D layered GO films.
Layered 2D GO films are integrated with silicon on insulator (SOI) nanowire waveguides to experimentally demonstrate an enhanced Kerr nonlinearity, observed through selfphase modulation (SPM). The GO ...films are integrated with SOI nanowires using a large area, transfer free, layer by layer coating method that yields precise control of the film thickness. The film placement and coating length are controlled by opening windows in the silica cladding of the SOI nanowires. Owing to the strong mode overlap between the SOI nanowires and the highly nonlinear GO films, the Kerr nonlinearity of the hybrid waveguides is significantly enhanced. Detailed SPM measurements using picosecond optical pulses show significant spectral broadening enhancement for SOI nanowires coated with 2.2 mm long films of 1 to 3 layers of GO, and 0.4 mm long films with 5 to 20 layers of GO. By fitting the experimental results with theory, the dependence of the n2 for GO on layer number and pulse energy is obtained, showing interesting physical insights and trends of the layered GO films from 2D monolayers to quasi bulk like behavior. Finally, we show that by coating SOI nanowires with GO films the effective nonlinear parameter of SOI nanowires is increased 16 times, with the effective nonlinear figure of merit (FOM) increasing by about 20 times to greater than 5. These results reveal the strong potential of using layered GO films to improve the Kerr nonlinear optical performance of silicon photonic devices.
As a rapidly expanding family of 2D materials, MXenes have recently gained considerable attention. Herein, by developing a coating method that enables transfer‐free and layer‐by‐layer film coating, ...the nonlinear optical absorption (NOA) of Ti 3 C 2 T x MXene films is investigated. Using the Z ‐scan technique, the NOA of the MXene films is characterized at ≈800 nm. The results show that there is a strong and layer‐dependent NOA behavior, transitioning from reverse saturable absorption (RSA) to saturable absorption (SA) as the layer number increases from 5 to 30. Notably, the nonlinear absorption coefficient β changes significantly from ≈7.13 × 10 2 cm GW −1 to ≈−2.69 × 10 2 cm GW −1 within this range. The power‐dependent NOA of the MXene films is also characterized, and a decreasing trend in β is observed for increasing laser intensity. Finally, the NOA of 2D MXene films at ≈1550 nm is characterized by integrating them onto silicon nitride waveguides, where an SA behavior is observed for the films including 5 and 10 layers of MXene, in contrast to the RSA observed at ≈800 nm. These results reveal intriguing nonlinear optical properties of 2D MXene films, highlighting their versatility and potential for implementing high‐performance nonlinear photonic devices.
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