The results of a study of the radial distribution of the mechanical stresses, oxygen concentration, and optical inhomogeneity in antimony-doped germanium crystals 200 mm in diameter, with the ...electrical resistivity ranging from 10.5 to 18.5 Ω cm and grown by the Czochralski method, are presented. It has been established that the residual stresses calculated from X-ray diffraction data are correlated with the results of numerical simulation of thermoelastic stresses and are interrelated with the values of the optical inhomogeneity and the concentration of the dissolved oxygen present in germanium in an atomically dispersed state.
Both Sb-doped Germanium and Ge-Si solid solution single crystals with resistivity from 1.5 to 7 Ω·cm were grown using the Czochralski method. The optical transmission of single crystals and the ...stability of their optical properties were studied by infrared Fourier spectroscopy at a wavelength of 10.6 μm and temperature range from 25 to 60 °C. It was found that decreasing the background impurities concentration leads to the reduction of the infrared absorption at room temperature while not affecting the thermal stability of the optical properties. Thermal stability of the optical properties of Sb-doped germanium single crystals increases by adding from 0.2 to 0.8 at % of silicon.
Homogeneous Sb-doped single crystals of Ge–Si solid solutions are grown with a silicon content of 0.2 to 0.8 at %. The optical absorption of single crystals with a resistivity of (2–3) Ω cm is ...studied by IR Fourier spectroscopy at a wavelength of 10.6 μm in the temperature range from 25 to 60°C. It is found that the introduction of silicon into antimony-doped germanium improves the temperature stability of the optical properties of the crystals.
The effect of doping on the optical transmittance of germanium single crystals is studied by infrared Fourier spectroscopy. It is established that the introduction of silicon and tellurium additives ...into germanium doped with antimony provides a means for improving the temperature stability of the optical properties of the crystals.
Oxygen impurities and optical properties of Sb-doped germanium single crystals were investigated with Fourier transformed infrared spectrometry. The effect of oxygen on crystal structure was shown. ...The effects of annealing in the temperature range 623-723 K on the behavior of oxygen dissolved in germanium and on optical properties of single crystals have been investigated. It was found that annealing at lower oxygen partial pressure leads to the formation of thermal donors (TD) on the basis of dissolved oxygen atoms. It was established that TD formation and the decrease of unbound oxygen concentration is accompanied by the increase in temperature stability of the optical properties of crystals.
The annealing effect in the temperature range from 350 to 450 °С on the behavior of interstitial oxygen Оi dissolved in germanium and on optical properties of single crystals has been investigated by ...Fourier transformed infrared spectrometry. It was found that oxygen band maximum of 843 cm–1 shifted toward the 856 cm−1 with oxygen concentration increasing after annealing at the oxygen partial pressure ranged from 1 to 103 Pа. The annealing at lower values led to the decrease of 843 cm–1 band intensity due to the formation of thermal donors (TD) on the basis of dissolved oxygen atoms Оi. It was established that TD formation and the decrease of unbound oxygen concentration affected optical properties of the crystals.
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