Reactively sputtered nickel oxide (NiO ₓ) films provide transparent, antireflective, electrically conductive, chemically stable coatings that also are highly active electrocatalysts for the oxidation ...of water to O ₂(g). These NiO ₓ coatings provide protective layers on a variety of technologically important semiconducting photoanodes, including textured crystalline Si passivated by amorphous silicon, crystalline n-type cadmium telluride, and hydrogenated amorphous silicon. Under anodic operation in 1.0 M aqueous potassium hydroxide (pH 14) in the presence of simulated sunlight, the NiO ₓ films stabilized all of these self-passivating, high-efficiency semiconducting photoelectrodes for >100 h of sustained, quantitative solar-driven oxidation of water to O ₂(g).
Significance The development of efficient artificial photosynthetic systems, designed to store solar energy in chemical bonds, requires the pairing of stable light-absorbing electrodes for both the oxidative and reductive half-reactions. The development of such systems has been hindered in part by the lack of semiconducting photoanodes that are stable under the conditions required for the production of O ₂(g) from water. We demonstrate herein that a reactively sputtered NiO ₓ layer provides a transparent, antireflective, conductive, chemically stable, inherently catalytic coating that stabilizes many efficient and technologically important semiconducting photoanodes under viable system operating conditions, thereby allowing the use of these materials in an integrated system for the sustainable, direct production of fuels from sunlight.
Ultrathin dual layers of TiO2 and Ni have been used to stabilize polycrystalline BiVO4 photoanodes against photocorrosion in an aqueous alkaline (pH = 13) electrolyte. Conformal, amorphous TiO2 ...layers were deposited on BiVO4 thin films by atomic-layer deposition, with Ni deposited onto the TiO2 by sputtering. Under simulated air mass 1.5 illumination, the dual-layer coating extended the lifetime of the BiVO4 photoanodes during photoelectrochemical water oxidation from minutes, for bare BiVO4, to hours, for the modified electrodes. X-ray photoelectron spectroscopy showed that these layers imparted chemical stability to the semiconductor/electrolyte interface. Transmission electron microscopy revealed the structure and morphology of the polycrystalline BiVO4 film as well as of the thin coating layers. This work demonstrates that protection schemes based on ultrathin corrosion-resistant overlayers can be applied beneficially to polycrystalline photoanode materials under conditions relevant to efficient solar-driven water-splitting systems.
•Protection layers stabilize Si, III–V, II–VI photoanodes in alkaline media.•Optical, electronic, and mechanistic studies described.•Wide range of working space for such protective systems is ...discussed.
Small-band-gap (Eg<2eV) semiconductors must be stabilized for use in integrated devices that convert solar energy into the bonding energy of a reduced fuel, specifically H2(g) or a reduced-carbon species such as CH3OH or CH4. To sustainably and scalably complete the fuel cycle, electrons must be liberated through the oxidation of water to O2(g). Strongly acidic or strongly alkaline electrolytes are needed to enable efficient and intrinsically safe operation of a full solar-driven water-splitting system. However, under water-oxidation conditions, the small-band-gap semiconductors required for efficient cell operation are unstable, either dissolving or forming insulating surface oxides. We describe herein recent progress in the protection of semiconductor photoanodes under such operational conditions. We specifically describe the properties of two protective overlayers, TiO2/Ni and NiOx, both of which have demonstrated the ability to protect otherwise unstable semiconductors for >100h of continuous solar-driven water oxidation when in contact with a highly alkaline aqueous electrolyte (1.0M KOH(aq)). The stabilization of various semiconductor photoanodes is reviewed in the context of the electronic characteristics and a mechanistic analysis of the TiO2 films, along with a discussion of the optical, catalytic, and electronic nature of NiOx films for stabilization of semiconductor photoanodes for water oxidation.
Light absorbers with moderate band gaps (1–2 eV) are required for high-efficiency solar fuels devices, but most semiconducting photoanodes undergo photocorrosion or passivation in aqueous solution. ...Amorphous TiO2 deposited by atomic-layer deposition (ALD) onto various n-type semiconductors (Si, GaAs, GaP, and CdTe) and coated with thin films or islands of Ni produces efficient, stable photoanodes for water oxidation, with the TiO2 films protecting the underlying semiconductor from photocorrosion in pH = 14 KOH(aq). The links between the electronic properties of the TiO2 in these electrodes and the structure and energetic defect states of the material are not yet well-elucidated. We show herein that TiO2 films with a variety of crystal structures and midgap defect state distributions, deposited using both ALD and sputtering, form rectifying junctions with n-Si and are highly conductive toward photogenerated carriers in n-Si/TiO2/Ni photoanodes. Moreover, the photovoltage of these electrodes can be modified by annealing the TiO2 in reducing or oxidizing environments. All of the polycrystalline TiO2 films with compact grain boundaries investigated herein protected the n-Si photoanodes against photocorrosion in pH = 14 KOH(aq). Hence, in these devices, conduction through the TiO2 layer is neither specific to a particular amorphous or crystalline structure nor determined wholly by a particular extrinsic dopant impurity. The coupled structural and energetic properties of TiO2, and potentially other protective oxides, can therefore be controlled to yield optimized photoelectrode performance.
Solid-state electrical, photoelectrochemical, and photoelectron spectroscopic techniques have been used to characterize the behavior and electronic structure of interfaces between n-Si, n+-Si, or ...p+-Si surfaces and amorphous coatings of TiO2 formed using atomic-layer deposition. Photoelectrochemical measurements of n-Si/TiO2/Ni interfaces in contact with a series of one-electron, electrochemically reversible redox systems indicated that the n-Si/TiO2/Ni structure acted as a buried junction whose photovoltage was independent of the formal potential of the contacting electrolyte. Solid-state current–voltage analysis indicated that the built-in voltage of the n-Si/TiO2 heterojunction was ∼0.7 V, with an effective Richardson constant ∼1/100th of the value of typical Si/metal Schottky barriers. X-ray photoelectron spectroscopic data allowed formulation of energy band-diagrams for the n-Si/TiO2, n+-Si/TiO2, and p+-Si/TiO2 interfaces. The XPS data were consistent with the rectifying behavior observed for amorphous TiO2 interfaces with n-Si and n+-Si surfaces and with an ohmic contact at the interface between amorphous TiO2 and p+-Si.
The long-range order of anisotropic phototropic Se–Te films grown electrochemically at room temperature under uniform-intensity, polarized, incoherent, near-IR illumination has been investigated ...using crystalline (111)-oriented Si substrates doped degenerately with either p- or n-type dopants. Fourier-transform (FT) analysis was performed on large-area images obtained with a scanning electron microscope, and peak shapes in the FT spectra were used to determine the pattern fidelity in the deposited Se–Te films. Under nominally identical illumination conditions, phototropic films grown on p+-Si(111) exhibited a higher degree of anisotropy and a more well-defined pattern period than phototropic films grown on n+-Si(111). Similar differences in the phototropic Se–Te deposit morphology and pattern fidelity on p+-Si versus n+-Si were observed when the deposition rate and current densities were controlled for by adjusting the deposition parameters and illumination conditions. The doping-related effects of the Si substrate on the pattern fidelity of the phototropic Se–Te deposits are ascribable to an electrical effect produced by the different interfacial junction energetics between Se–Te and p+-Si versus n+-Si that influences the dynamic behavior during phototropic growth at the Se–Te/Si interface.
Atomic-layer deposition (ALD) of thin layers of cobalt oxide on n-type BiVO4 produced photoanodes capable of water oxidation with essentially 100% faradaic efficiency in alkaline, pH = 13 ...electrolytes. By contrast, under the same operating conditions, BiVO4 photoanodes without the Co oxide catalytic layer exhibited lower faradaic yields, of ca. 70%, for O2 evolution and were unstable, becoming rapidly photopassivated. High numbers (>25) of ALD cycles of Co oxide deposition gave electrodes that displayed poor photoelectrochemical behavior, but 15–20 ALD cycles produced Co oxide overlayers ∼1 nm in thickness, with the resulting photoelectrodes exhibiting a stable photocurrent density of 1.49 mA cm–2 at the oxygen-evolution potential and an open-circuit potential of 0.404 V versus the reversible hydrogen electrode, under 100 mW cm–2 of simulated air mass 1.5 illumination.
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