Rezultati iskanja Linder, Sune NUK

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zadetkov: 152

151.	Post-breakdown statistics and acceleration characteristics in high-K dielectric stacks Wu, E; Sune, J; Linder, B ... 2011 International Reliability Physics Symposium, 2011-April Conference Proceeding Contrary to recent claims, experimental results obtained in thin and thick Hafnium-based high-K gate dielectric stacks demonstrate that progressive breakdown is relevant in these insulators. For thin ...	Celotno besedilo
152.	Critical assessment of soft breakdown stability time and the implementation of new post-breakdown methodology for ultra-thin gate oxides [MOSFET] Wu, E.; Sune, J.; Linder, B. ... IEEE International Electron Devices Meeting 2003, 2003 Conference Proceeding The reliability margin seriously shrinks when gate oxide thickness is scaled below 2 nm. In this work we pursue a general picture of the breakdown in ultra-thin oxides by studying the statistics of ...	Celotno besedilo

Rezultati iskanja