In the period from 1981 to 1986, 85 patients with ovarian carcinoma stage I and II were treated in a prospective study. All patients underwent primary surgery: bilateral salpingo-oophorectomy, ...hysterectomy and omentectomy followed by a staging procedure. In 46 patients, the staging was completed by a retroperitoneal lymph-node dissection, whereas in 39 patients, this procedure was omitted. Total abdominal irradiation (25 Gy/1.50 Gy per fraction) was followed by a pelvic boost dose (25 Gy/1.75 Gy per fraction). Patients with stage I and IIa well differentiated tumours received no adjuvant radiotherapy and are not reported here. The 5-year actuarial recurrence-free survival rate for the irradiated group was 75%. Stage according to FIGO appeared to be of significant prognostic influence. There was no difference in survival between completely and incompletely staged patients. Serious (small) bowel complications occurred however in 6 out of 45 patients who had undergone complete staging.
A 22 nm generation technology is described incorporating transistor and interconnects with performance suitable for the needs of both high density DRAM and high-performance logic devices. We have ...integrated a 0.029 μm 2 DRAM cell capable of meeting >100μs retention at 95°C. Results will be reported for a test-vehicle with best-reported array density at 17.5Mb/mm 2 based on a 128Mb macro. The process technology utilizes our leading edge 22nm 3-D tri-gate transistor as described previously 1,2. The excellent leakage and performance characteristics of tri-gate transistors have been optimized for the access transistor, while maintaining the performance needed to enable high performance circuits in the same die. A high aspect-ratio, 3-D metal-insulator-metal capacitor trench has been integrated into the ultra-low-k interlayer dielectric and Cu metallization used for interconnect stacks. The previously described 22nm logic and SoC technology has been leveraged, with a 3-D MIM capacitor included in the ultra-low-k (ULK) ILD at the same level as the Metal-2 through Metal-4 interconnects. Excellent retention capability and yield have been demonstrated.
Drug screening strategy for human membrane proteins: From NMR protein backbone structure to in silica- and NMR-screened hits Lindert, Steffen; Innokentiy MaslennikovauthorStructural Biology Laboratory, The Salk Institute for Biological Studies, 10010 North Torrey Pines Rd., La Jolla, CA 92037, USAJoint Center for Biosciences, 301-B, Songdo Smart Valley 214, Songdo-dong, Yeonsu-ku, Incheon 406-840, Republic of Korea; Ellis J.C. ChiuauthorStructural Biology Laboratory, The Salk Institute for Biological Studies, 10010 North Torrey Pines Rd., La Jolla, CA 92037, USA ...
2015
Journal Article
Antebellum Wage Widening Once Again Lindert, Peter H.; Williamson, Jeffrey G.
The Journal of economic history,
06/1982, Letnik:
42, Številka:
2
Journal Article
An advanced low power, strained channel, dual poly CMOS 65nm technology with enhanced transistor performance is presented. At 1V and off current of 100nA/mum, transistors have record currents of ...1.21mA/mum and 0.71mA/mum for NMOS and PMOS respectively. This industry leading 65nm technology is currently in high volume manufacturing
