For future high luminosity LHC experiments it will be important to develop new detector systems with increased space and time resolution and also better radiation hardness in order to operate in high ...luminosity environment. A possible technology which could give such performances is 3D silicon detectors. This work explores the possibility of a pixel geometry by designing and simulating different solutions, using Sentaurus Tecnology Computer Aided Design (TCAD) as design and simulation tool, and analysing their performances. A key factor during the selection was the generated electric field and the carrier velocity inside the active area of the pixel.
The photophysical properties of blends of fluorene copolymer and the fullerene derivative PCBM are analyzed with a particular attention to photovoltaic applications. The properties of the blends are ...determined by the relative alignment of the HOMO energy levels. In the blend where the HOMO levels of the copolymer and the fullerene are aligned there is not signature of charge stabilization and photovoltaic effect. While in the blend where there is an offset between the HOMO levels the charge stabilization is accompanied by good photovoltaic performances. The photoluminescence spectrum of the latter blend is characterized by the appearance of a new peak at low energy with a lifetime of a few ns that red‐shifts with the increase of the PCBM percentage. The feature is attributed to the emission from a charge‐transfer exciton that is red‐shifted by the change of dielectric constant of the medium.
The photophysical properties of blends of fluorene copolymer and PCBM are studied with particular attention to photovoltaic application. The appearance in the F8DTBT/PCBM blend of a new low energy photoluminescence peak is ascribed to the emission of a charge transfer excitons (see figure).
Organic light‐emitting transistors based on bilayered structures (see figure) exhibit balanced ambipolar transport and mobility values as large as 3 × 10–2 cm2 V–1 s–1. The best performances are ...realized by sequentially depositing α,ω‐dihexyl‐quaterthiophene (DH4T) as p‐type and N,N′‐ditridecylperylene‐3,4,9,10‐tetracarboxylic diimide (P13) as n‐type materials. Laser‐scanning confocal microscopy allows selective imaging of the layers.
With the growing influence of intergovernmental organizations such as the European Union and the Association of Southeast Asian Nations (ASEAN), the scope and complexity of human resource development ...(HRD) activities have expanded. Informed by an institutional theory perspective, we examined the evolution of HRD as well as HRD-related programs in ASEAN to illuminate the mechanisms and conditions shaping HRD in ASEAN. Our primary sources were archival data from ASEAN from 1967–2021 and relevant publications of international development agencies that feature HRD-related activities in the region. Our analysis suggests that the establishment of an intergovernmental organization (i.e., ASEAN), with its continuing efforts towards economic cooperation and community building among its member states, was central to the emergence and development of Regional HRD in Southeast Asia. This inquiry advances understanding of the role of intergovernmental institutions in influencing HRD activities. The study also showcases the critical role of HRD in furthering common interests around economic and socio-cultural initiatives in ASEAN.
The development of low‐cost, flexible electronic devices is subordinated to the advancement in solution‐based and low‐temperature‐processable semiconducting materials, such as colloidal quantum dots ...(QDs) and single‐walled carbon nanotubes (SWCNTs). Here, excellent compatibility of QDs and SWCNTs as a complementary pair of semiconducting materials for fabrication of high‐performance complementary metal‐oxide‐semiconductor (CMOS)‐like inverters is demonstrated. The n‐type field effect transistors (FETs) based on I− capped PbS QDs (Vth = 0.2 V, on/off = 105, SS‐th = 114 mV dec−1, µe = 0.22 cm2 V−1 s−1) and the p‐type FETs with tailored parameters based on low‐density random network of SWCNTs (Vth = −0.2 V, on/off > 105, SS‐th = 63 mV dec−1, µh = 0.04 cm2 V−1 s−1) are integrated on the same substrate in order to obtain high‐performance hybrid inverters. The inverters operate in the sub‐1 V range (0.9 V) and have high gain (76 V/V), large maximum‐equal‐criteria noise margins (80%), and peak power consumption of 3 nW, in combination with low hysteresis (10 mV).
An all‐solution‐processable hybrid CMOS‐like inverter based on PbS quantum dots (n‐type) and single‐walled carbon nanotubes (p‐type) is demonstrated. The inverter operates in the sub‐1 V range (0.9 V) and has high gain (76 V/V), large noise margins (80%), low hysteresis (10 mV), and low peak power consumption (3 nW).
Hybrid phototransistors of graphene and the organic semiconductor poly(3-hexylthiophene-2,5-diyl) (P3HT) are presented. Two types of phototransistors are demonstrated with a charge carrier transit ...time that differs by more than 6 orders of magnitude. High transit time devices are fabricated using a photoresist-free recipe to create large–area graphene transistors made out of graphene grown by chemical vapor deposition. Low transit time devices are fabricated out of mechanically exfoliated graphene on top of mechanically exfoliated hexagonal boron nitride using standard e-beam lithography. Responsivities exceeding 105 A/W are obtained for the low transit time devices.
Vesicle buster: Versatile functionalized nanocontainers, based on the stable incorporation of 22 mer DNA‐b‐PPO block copolymers (DBCs) into lipid vesicles, are presented (see picture). The study ...shows effective and sequence‐specific cargo release from the DBC–lipid vesicles. Hybridization of these vesicles with an oligonucleotide photosensitizer allows for singlet oxygen generation upon irradiation, which induces cargo release.
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